Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Moab R. Philip; Dipayan D. Choudhary; Mehrdad Djavid; Md Nasiruddin Bhuyian; James Piao; Thi T. Pham; Durgamadhab Misra; Hieu P.T. Nguyen

doi:10.1116/1.4977174

Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Moab R. Philip, Dipayan D. Choudhary, Mehrdad Djavid, Md Nasiruddin Bhuyian, James Piao, Thi T. Pham, Durgamadhab Misra, Hieu P.T. Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The authors report on the achievement of full-color nanowire light-emitting diodes (LEDs), with the incorporation of InGaN/AlGaN nanowire heterostructures grown directly on the Si (111) substrates by molecular beam epitaxy. Multiple color emission across nearly the entire visible wavelength range can be realized by varying the In composition in the InGaN quantum dot active region. Moreover, multiple AlGaN shell layers are spontaneously formed during the growth of InGaN/AlGaN quantum dots, leading to the drastically reduced nonradiative surface recombination, and enhanced carrier injection efficiency. Such core-shell nanowire structures exhibit significantly increased carrier lifetime and massively enhanced photoluminescence intensity compared to conventional InGaN/GaN nanowire LEDs. A high color rendering index of ∼98 was recorded for white-light emitted from such phosphor-free core-shell nanowire LEDs.

Original language	English (US)
Article number	02B108
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	2
DOIs	https://doi.org/10.1116/1.4977174
State	Published - Mar 1 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy",

abstract = "The authors report on the achievement of full-color nanowire light-emitting diodes (LEDs), with the incorporation of InGaN/AlGaN nanowire heterostructures grown directly on the Si (111) substrates by molecular beam epitaxy. Multiple color emission across nearly the entire visible wavelength range can be realized by varying the In composition in the InGaN quantum dot active region. Moreover, multiple AlGaN shell layers are spontaneously formed during the growth of InGaN/AlGaN quantum dots, leading to the drastically reduced nonradiative surface recombination, and enhanced carrier injection efficiency. Such core-shell nanowire structures exhibit significantly increased carrier lifetime and massively enhanced photoluminescence intensity compared to conventional InGaN/GaN nanowire LEDs. A high color rendering index of ∼98 was recorded for white-light emitted from such phosphor-free core-shell nanowire LEDs.",

author = "Philip, {Moab R.} and Choudhary, {Dipayan D.} and Mehrdad Djavid and Bhuyian, {Md Nasiruddin} and James Piao and Pham, {Thi T.} and Durgamadhab Misra and Nguyen, {Hieu P.T.}",

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T1 - Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

AU - Philip, Moab R.

AU - Choudhary, Dipayan D.

AU - Djavid, Mehrdad

AU - Bhuyian, Md Nasiruddin

AU - Piao, James

AU - Pham, Thi T.

AU - Misra, Durgamadhab

AU - Nguyen, Hieu P.T.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The authors report on the achievement of full-color nanowire light-emitting diodes (LEDs), with the incorporation of InGaN/AlGaN nanowire heterostructures grown directly on the Si (111) substrates by molecular beam epitaxy. Multiple color emission across nearly the entire visible wavelength range can be realized by varying the In composition in the InGaN quantum dot active region. Moreover, multiple AlGaN shell layers are spontaneously formed during the growth of InGaN/AlGaN quantum dots, leading to the drastically reduced nonradiative surface recombination, and enhanced carrier injection efficiency. Such core-shell nanowire structures exhibit significantly increased carrier lifetime and massively enhanced photoluminescence intensity compared to conventional InGaN/GaN nanowire LEDs. A high color rendering index of ∼98 was recorded for white-light emitted from such phosphor-free core-shell nanowire LEDs.

AB - The authors report on the achievement of full-color nanowire light-emitting diodes (LEDs), with the incorporation of InGaN/AlGaN nanowire heterostructures grown directly on the Si (111) substrates by molecular beam epitaxy. Multiple color emission across nearly the entire visible wavelength range can be realized by varying the In composition in the InGaN quantum dot active region. Moreover, multiple AlGaN shell layers are spontaneously formed during the growth of InGaN/AlGaN quantum dots, leading to the drastically reduced nonradiative surface recombination, and enhanced carrier injection efficiency. Such core-shell nanowire structures exhibit significantly increased carrier lifetime and massively enhanced photoluminescence intensity compared to conventional InGaN/GaN nanowire LEDs. A high color rendering index of ∼98 was recorded for white-light emitted from such phosphor-free core-shell nanowire LEDs.

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Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

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