Abstract
Photoluminescence (PL) and Fourier-transform infrared (FTIR) measurements have been performed on light-emitting porous silicon (LEPSi) after annealing at temperatures below 600°C. Two different kinds of samples with different surface morphologies and different initial concentrations of chemically bonded hydrogen were studied. In hydrogen-rich samples we have observed an increase of PL intensity at temperatures up to 250°C, which correlated with an increase of Si - H bond concentration. A correlation between PL peak wavelength and the ratio of Si - O bonds over Si - H bonds has been demonstrated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1983-1985 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 64 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1994 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)