Correlation between photoluminescence and surface species in porous silicon: Low-temperature annealing

L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journalArticlepeer-review

108 Scopus citations

Abstract

Photoluminescence (PL) and Fourier-transform infrared (FTIR) measurements have been performed on light-emitting porous silicon (LEPSi) after annealing at temperatures below 600°C. Two different kinds of samples with different surface morphologies and different initial concentrations of chemically bonded hydrogen were studied. In hydrogen-rich samples we have observed an increase of PL intensity at temperatures up to 250°C, which correlated with an increase of Si - H bond concentration. A correlation between PL peak wavelength and the ratio of Si - O bonds over Si - H bonds has been demonstrated.

Original languageEnglish (US)
Pages (from-to)1983-1985
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number15
DOIs
StatePublished - 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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