Correlation of negative bias temperature instability and breakdown in HfO2/TiN gate stacks

N. Rahim; D. Misra

doi:10.1149/1.3372586

Correlation of negative bias temperature instability and breakdown in HfO₂/TiN gate stacks

N. Rahim, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Both negative bias temperature instability (NBTI) and time dependent dielectric breakdown (TDDB) are two major reliability issues for long term performance of high-k gate stacks. In this work, these two degradation mechanisms were extensively analyzed to explore any possible correlation in terms of defects formation. A variety of dielectric stacks were considered to perform NBTI and TDDB. It was observed that NBTI induced defects, generated at the interface and in the interfacial layer were somewhat identical to the defects that dominate the breakdown process.

Original language	English (US)
Title of host publication	Dielectrics for Nanosystems 4
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	323-330
Number of pages	8
Edition	2
DOIs	https://doi.org/10.1149/1.3372586
State	Published - Dec 30 2010
Event	4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting - Vancouver, BC, Canada Duration: Apr 26 2010 → Apr 28 2010

Publication series

Name	ECS Transactions
Number	2
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting
Country/Territory	Canada
City	Vancouver, BC
Period	4/26/10 → 4/28/10

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.3372586

Cite this

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title = "Correlation of negative bias temperature instability and breakdown in HfO2/TiN gate stacks",

abstract = "Both negative bias temperature instability (NBTI) and time dependent dielectric breakdown (TDDB) are two major reliability issues for long term performance of high-k gate stacks. In this work, these two degradation mechanisms were extensively analyzed to explore any possible correlation in terms of defects formation. A variety of dielectric stacks were considered to perform NBTI and TDDB. It was observed that NBTI induced defects, generated at the interface and in the interfacial layer were somewhat identical to the defects that dominate the breakdown process.",

author = "N. Rahim and D. Misra",

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booktitle = "Dielectrics for Nanosystems 4",

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note = "4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting ; Conference date: 26-04-2010 Through 28-04-2010",

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Rahim, N & Misra, D 2010, Correlation of negative bias temperature instability and breakdown in HfO₂/TiN gate stacks. in Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 28, pp. 323-330, 4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting, Vancouver, BC, Canada, 4/26/10. https://doi.org/10.1149/1.3372586

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AU - Misra, D.

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N2 - Both negative bias temperature instability (NBTI) and time dependent dielectric breakdown (TDDB) are two major reliability issues for long term performance of high-k gate stacks. In this work, these two degradation mechanisms were extensively analyzed to explore any possible correlation in terms of defects formation. A variety of dielectric stacks were considered to perform NBTI and TDDB. It was observed that NBTI induced defects, generated at the interface and in the interfacial layer were somewhat identical to the defects that dominate the breakdown process.

AB - Both negative bias temperature instability (NBTI) and time dependent dielectric breakdown (TDDB) are two major reliability issues for long term performance of high-k gate stacks. In this work, these two degradation mechanisms were extensively analyzed to explore any possible correlation in terms of defects formation. A variety of dielectric stacks were considered to perform NBTI and TDDB. It was observed that NBTI induced defects, generated at the interface and in the interfacial layer were somewhat identical to the defects that dominate the breakdown process.

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