Correlation of negative bias temperature instability and breakdown in HfO2/TiN gate stacks

N. Rahim, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Both negative bias temperature instability (NBTI) and time dependent dielectric breakdown (TDDB) are two major reliability issues for long term performance of high-k gate stacks. In this work, these two degradation mechanisms were extensively analyzed to explore any possible correlation in terms of defects formation. A variety of dielectric stacks were considered to perform NBTI and TDDB. It was observed that NBTI induced defects, generated at the interface and in the interfacial layer were somewhat identical to the defects that dominate the breakdown process.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages323-330
Number of pages8
Edition2
DOIs
StatePublished - Dec 30 2010
Event4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting - Vancouver, BC, Canada
Duration: Apr 26 2010Apr 28 2010

Publication series

NameECS Transactions
Number2
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting
Country/TerritoryCanada
CityVancouver, BC
Period4/26/104/28/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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