Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites

Congwu Cui; Trevor A. Tyson

doi:10.1063/1.1646212

Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites

Congwu Cui
, Trevor A. Tyson

Physics

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

By applying external pressure on manganites of different chemical doping systems and doping concentrations and, hence, different e_g electron bandwidths, it was possible that the pressure effect on the MIT in manganites is not equivalent to that of the chemical doping. The critical pressure was found to exist in all of the samples studied and possibly is universal for the MIT in the manganites.

Original language	English (US)
Pages (from-to)	942-944
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	6
DOIs	https://doi.org/10.1063/1.1646212
State	Published - Feb 9 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1646212

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title = "Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites",

abstract = "By applying external pressure on manganites of different chemical doping systems and doping concentrations and, hence, different eg electron bandwidths, it was possible that the pressure effect on the MIT in manganites is not equivalent to that of the chemical doping. The critical pressure was found to exist in all of the samples studied and possibly is universal for the MIT in the manganites.",

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AU - Cui, Congwu

AU - Tyson, Trevor A.

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Y1 - 2004/2/9

N2 - By applying external pressure on manganites of different chemical doping systems and doping concentrations and, hence, different eg electron bandwidths, it was possible that the pressure effect on the MIT in manganites is not equivalent to that of the chemical doping. The critical pressure was found to exist in all of the samples studied and possibly is universal for the MIT in the manganites.

AB - By applying external pressure on manganites of different chemical doping systems and doping concentrations and, hence, different eg electron bandwidths, it was possible that the pressure effect on the MIT in manganites is not equivalent to that of the chemical doping. The critical pressure was found to exist in all of the samples studied and possibly is universal for the MIT in the manganites.

UR - https://www.scopus.com/pages/publications/1542337054

UR - https://www.scopus.com/pages/publications/1542337054#tab=citedBy

U2 - 10.1063/1.1646212

DO - 10.1063/1.1646212

M3 - Article

AN - SCOPUS:1542337054

SN - 0003-6951

VL - 84

SP - 942

EP - 944

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Correlations between pressure and bandwidth effects in metal-insulator transitions in manganites

Abstract

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