Critical scaling of the conductance in a disordered insulator

M. A. Paalanen; T. F. Rosenbaum; G. A. Thomas; R. N. Bhatt

doi:10.1103/PhysRevLett.51.1896

Critical scaling of the conductance in a disordered insulator

M. A. Paalanen, T. F. Rosenbaum, G. A. Thomas, R. N. Bhatt

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Abstract

A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.

Original language	English (US)
Pages (from-to)	1896-1899
Number of pages	4
Journal	Physical Review Letters
Volume	51
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevLett.51.1896
State	Published - Nov 14 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.51.1896

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title = "Critical scaling of the conductance in a disordered insulator",

abstract = "A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.",

author = "Paalanen, {M. A.} and Rosenbaum, {T. F.} and Thomas, {G. A.} and Bhatt, {R. N.}",

year = "1983",

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doi = "10.1103/PhysRevLett.51.1896",

language = "English (US)",

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journal = "Physical Review Letters",

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AU - Paalanen, M. A.

AU - Rosenbaum, T. F.

AU - Thomas, G. A.

AU - Bhatt, R. N.

PY - 1983/11/14

Y1 - 1983/11/14

N2 - A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.

AB - A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.

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DO - 10.1103/PhysRevLett.51.1896

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JO - Physical Review Letters

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Critical scaling of the conductance in a disordered insulator

Abstract

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