Abstract
In a 3-dimensional integrated magnetic sensor cross-axis sensitivities among the various components of the magnetic field have been a practical design problem. This paper describes the elimination of any cross-sensitivity if a 3-dimensional magnetic sensor is implemented in BiCMOS technology. A device is designed and fabricated by placing a split-collector magnetotransistor and a split-drain MOSFET adjacent to each other to detect the three components of the magnetic field vector.
Original language | English (US) |
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Title of host publication | ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference |
Publisher | IEEE Computer Society |
Pages | 775-778 |
Number of pages | 4 |
ISBN (Electronic) | 2863321358 |
ISBN (Print) | 9782863321355 |
State | Published - Jan 1 1993 |
Event | 23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France Duration: Sep 13 1993 → Sep 16 1993 |
Other
Other | 23rd European Solid State Device Research Conference, ESSDERC 1993 |
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Country/Territory | France |
City | Grenoble |
Period | 9/13/93 → 9/16/93 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality