Abstract
In a 3-dimensional integrated magnetic sensor cross-axis sensitivities among the various components of the magnetic field have been a practical design problem. This paper describes the elimination of any cross-sensitivity if a 3-dimensional magnetic sensor is implemented in BiCMOS technology. A device is designed and fabricated by placing a split-collector magnetotransistor and a split-drain MOSFET adjacent to each other to detect the three components of the magnetic field vector.
| Original language | English (US) |
|---|---|
| Title of host publication | ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference |
| Publisher | IEEE Computer Society |
| Pages | 775-778 |
| Number of pages | 4 |
| ISBN (Electronic) | 2863321358 |
| ISBN (Print) | 9782863321355 |
| State | Published - Jan 1 1993 |
| Event | 23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France Duration: Sep 13 1993 → Sep 16 1993 |
Other
| Other | 23rd European Solid State Device Research Conference, ESSDERC 1993 |
|---|---|
| Country/Territory | France |
| City | Grenoble |
| Period | 9/13/93 → 9/16/93 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality