Cu(InGa)Se 2 thin films by elemental cp-evaporation/sputtering and large area module results

B. Sang; L. Chen; M. Akhtar; R. Govindarajan; A. E. Delahoy; J. Pankow

Cu(InGa)Se ₂ thin films by elemental cp-evaporation/sputtering and large area module results

B. Sang, L. Chen, M. Akhtar, R. Govindarajan, A. E. Delahoy, J. Pankow

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report process optimization and understanding resulting in high quality Cu(In,Ga)Se ₂ (CIGS) films and high efficiency devices/modules using a hybrid process for CIGS formation. In the hybrid process, the Cu is supplied by magnetron sputtering, and the In, Ga, and Se are supplied by linear thermal sources. The advantages of the hybrid process include: i) the ease and precision of Cu thickness control; and ii) flexibility to adjust the Ga depth profile. The investigation was conducted in a large-area, pilot-line system. Among others, important parameters were found to be the Cu/(In+Ga) ratio of the Cu/(InGa) ₂Se ₃ precursor, selenization temperature, and timing of the Ga and In fluxes. Cell efficiencies of over 13.0% and module efficiencies of 7.5% (26W, 0.35 m ²) were achieved. The film properties were investigated by XRD, SEM, and AES.

Original language	English (US)
Pages (from-to)	215-218
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
State	Published - 2005
Externally published	Yes
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{c8c5ffb21ad240a2bfb80a6887dc5c76,

title = "Cu(InGa)Se 2 thin films by elemental cp-evaporation/sputtering and large area module results",

abstract = "We report process optimization and understanding resulting in high quality Cu(In,Ga)Se 2 (CIGS) films and high efficiency devices/modules using a hybrid process for CIGS formation. In the hybrid process, the Cu is supplied by magnetron sputtering, and the In, Ga, and Se are supplied by linear thermal sources. The advantages of the hybrid process include: i) the ease and precision of Cu thickness control; and ii) flexibility to adjust the Ga depth profile. The investigation was conducted in a large-area, pilot-line system. Among others, important parameters were found to be the Cu/(In+Ga) ratio of the Cu/(InGa) 2Se 3 precursor, selenization temperature, and timing of the Ga and In fluxes. Cell efficiencies of over 13.0% and module efficiencies of 7.5% (26W, 0.35 m 2) were achieved. The film properties were investigated by XRD, SEM, and AES.",

author = "B. Sang and L. Chen and M. Akhtar and R. Govindarajan and Delahoy, {A. E.} and J. Pankow",

year = "2005",

language = "English (US)",

pages = "215--218",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - JOUR

T1 - Cu(InGa)Se 2 thin films by elemental cp-evaporation/sputtering and large area module results

AU - Sang, B.

AU - Chen, L.

AU - Akhtar, M.

AU - Govindarajan, R.

AU - Delahoy, A. E.

AU - Pankow, J.

PY - 2005

Y1 - 2005

N2 - We report process optimization and understanding resulting in high quality Cu(In,Ga)Se 2 (CIGS) films and high efficiency devices/modules using a hybrid process for CIGS formation. In the hybrid process, the Cu is supplied by magnetron sputtering, and the In, Ga, and Se are supplied by linear thermal sources. The advantages of the hybrid process include: i) the ease and precision of Cu thickness control; and ii) flexibility to adjust the Ga depth profile. The investigation was conducted in a large-area, pilot-line system. Among others, important parameters were found to be the Cu/(In+Ga) ratio of the Cu/(InGa) 2Se 3 precursor, selenization temperature, and timing of the Ga and In fluxes. Cell efficiencies of over 13.0% and module efficiencies of 7.5% (26W, 0.35 m 2) were achieved. The film properties were investigated by XRD, SEM, and AES.

AB - We report process optimization and understanding resulting in high quality Cu(In,Ga)Se 2 (CIGS) films and high efficiency devices/modules using a hybrid process for CIGS formation. In the hybrid process, the Cu is supplied by magnetron sputtering, and the In, Ga, and Se are supplied by linear thermal sources. The advantages of the hybrid process include: i) the ease and precision of Cu thickness control; and ii) flexibility to adjust the Ga depth profile. The investigation was conducted in a large-area, pilot-line system. Among others, important parameters were found to be the Cu/(In+Ga) ratio of the Cu/(InGa) 2Se 3 precursor, selenization temperature, and timing of the Ga and In fluxes. Cell efficiencies of over 13.0% and module efficiencies of 7.5% (26W, 0.35 m 2) were achieved. The film properties were investigated by XRD, SEM, and AES.

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M3 - Conference article

AN - SCOPUS:27944480007

SN - 0160-8371

SP - 215

EP - 218

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Cu(InGa)Se ₂ thin films by elemental cp-evaporation/sputtering and large area module results

Abstract

All Science Journal Classification (ASJC) codes

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