Current—Voltage Measurements of Thermally Grown SiO₂ Films on Etched Silicon Surfaces

Engineering & Materials Science

• Oxides 100%
• Silicon 91%
• Plasmas 80%
• Oxidation 77%
• Capacitors 45%
• MOS capacitors 45%
• Defect density 41%
• Polysilicon 33%
• Electric breakdown 32%
• Substrates 20%
• Defects 19%
• Hot Temperature 13%

Physics & Astronomy

• capacitors 76%
• oxides 72%
• breakdown 67%
• oxidation 64%
• silicon 62%
• defects 32%
• integrity 30%
• strip 25%
• reactors 22%
• probes 17%
• thin films 14%

Chemical Compounds

• Capacitor 89%
• Oxide 62%
• Liquid Film 56%
• Plasma 54%
• Oxidation Reaction 39%
• Surface 37%
• Dielectric Material 25%
• Probe 17%
• Reaction Yield 11%
• Time 10%