Effect of slot plane antenna (SPA) Ar plasma on the reliability of intermediate plasma (DSDS) treated ALD Hf1-xZrxO2 samples with x=0, 0.31, 0.8 were investigated. The MOS capacitors (MOSCAP) were subjected to a constant field stress of 27.5 MV/cm in the gate injection mode and the stress-induced flat-band voltage shifts and stress induced leakage currents were monitored. The dielectric film deposited without any intermediate step (As-Dep), having the same number of ALD cycles as DSDS samples was used as the control sample. It was observed that plasma exposure enhances the quality of high-κ film by reducing the number of intrinsic traps in the film and Zr addition further enhances the reliability. Breakdown characteristics also confirm this behavior. Electron affinity variation in HfO2 and ZrO2 and Zr variation seems to contribute to the improvement in DSDS Hf1-xZrxO2 (x=0.8) by suppressing the oxide trap formation as observed in the Weibull characteristics. DSDS Hf1-xZrxO2 with x=0.8, therefore, demonstrates a superior EOT downscaling ability and good reliability performance.
|Original language||English (US)|
|Number of pages||13|
|State||Published - Jan 1 2014|
|Event||6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States|
Duration: May 11 2014 → May 15 2014
All Science Journal Classification (ASJC) codes