TY - GEN
T1 - Decaborane, an alternative approach to ultra low energy ion implantation
AU - Jacobson, D. C.
AU - Bourdelle, Konstantin
AU - Gossmann, H. J.
AU - Sosnowski, M.
AU - Albano, M. A.
AU - Babaram, V.
AU - Poate, J. M.
AU - Agarwal, Aditya
AU - Perei, Alex
AU - Horsky, Tom
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2000
Y1 - 2000
N2 - Ion beams of decaborane (B10H14) are used to form ultra shallow p-type junctions in Si. Because the ion energy is partitioned between the atoms of the molecule, B atoms are implanted with only approximately one tenth of the energy of the beam. Thus severe problems created by the space charge of ultra low energy (ULE) ion beams are minimized. Moreover, standard ion implanters equipped with a decaborane ion source may be capable of ultra shallow (tens of nm) implantation of boron. Ionization and ion beam properties of decaborane were studied in the energy range of 2 - 10 kV. Under proper conditions in the ion source, most of the extracted ions consist of 10 B atoms (B10HX+) and they can be transported through the implanter without significant break-up or neutralization. Boron depth profiles measured by SIMS in Si wafers implanted with B10H X+ and B+ ions of equivalent energy are the same but it appears that the retained dose achieved with the molecular ions is higher than with the monomer ions for the same B fluence. The effect may be due to a different Si sputtering yield per impinging B atom with the two types of ions. Si wafers with test MOS devices were implanted with decaborane ions and ULE BF2+ ions of equivalent energy. Measured device characteristics are very similar. The results confirm the potential of decaborane ion beams as an alternative technology for manufacturing of ultra-shallow p-type junctions in Si.
AB - Ion beams of decaborane (B10H14) are used to form ultra shallow p-type junctions in Si. Because the ion energy is partitioned between the atoms of the molecule, B atoms are implanted with only approximately one tenth of the energy of the beam. Thus severe problems created by the space charge of ultra low energy (ULE) ion beams are minimized. Moreover, standard ion implanters equipped with a decaborane ion source may be capable of ultra shallow (tens of nm) implantation of boron. Ionization and ion beam properties of decaborane were studied in the energy range of 2 - 10 kV. Under proper conditions in the ion source, most of the extracted ions consist of 10 B atoms (B10HX+) and they can be transported through the implanter without significant break-up or neutralization. Boron depth profiles measured by SIMS in Si wafers implanted with B10H X+ and B+ ions of equivalent energy are the same but it appears that the retained dose achieved with the molecular ions is higher than with the monomer ions for the same B fluence. The effect may be due to a different Si sputtering yield per impinging B atom with the two types of ions. Si wafers with test MOS devices were implanted with decaborane ions and ULE BF2+ ions of equivalent energy. Measured device characteristics are very similar. The results confirm the potential of decaborane ion beams as an alternative technology for manufacturing of ultra-shallow p-type junctions in Si.
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U2 - 10.1109/.2000.924148
DO - 10.1109/.2000.924148
M3 - Conference contribution
AN - SCOPUS:78649838888
SN - 0780364627
SN - 9780780364622
T3 - Proceedings of the International Conference on Ion Implantation Technology
SP - 300
EP - 303
BT - 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
T2 - 2000 13th International Conference on Ion Implantation Technology, IIT 2000
Y2 - 17 September 2000 through 22 September 2000
ER -