Deep level defects in N+-CdS/P-CdTe solar cells

P. Kharangarh, Z. Cheng, G. Liu, G. E. Georgiou, K. K. Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We characterize the thin film n+-CdS/p-CdTe solar cells made with evaporated Cu as a primary back contact, using the temperature dependence of the reverse bias diode current (J-V-T) to determine the energy levels of deep defects. Since the solar cell quickly degrades (probably because of the well-established Cu diffusion from the back ohmic contact into CdTe) with measurement at temperatures greater than ∼100°C, measurements are done below this temperature (∼100°C). The results of our J-V-T measurements on solar cells made at NJIT show that while modest amounts of Cu enhance cell performance, an excessive high temperature process step degrades device quality and reduces efficiency. Results identify the physical trap though the energy (activation) level. The location of and the amount of trap are derived from the voltage dependence of diode leakage using a Shockley-Read-Hall (SRH) recombination model.

Original languageEnglish (US)
Title of host publicationMaterials Challenges in Alternative and Renewable Energy II - A Collection of Papers Presented at the Materials Challenges in Alternative and Renewable Energy Conference
PublisherAmerican Ceramic Society
Pages297-302
Number of pages6
ISBN (Print)9781118580981
DOIs
StatePublished - 2013
Event2nd Materials Challenges in Alternative and Renewable Energy, Energy 2012 - Clearwater, FL, United States
Duration: Feb 26 2012Mar 1 2012

Publication series

NameCeramic Transactions
Volume239
ISSN (Print)1042-1122

Other

Other2nd Materials Challenges in Alternative and Renewable Energy, Energy 2012
Country/TerritoryUnited States
CityClearwater, FL
Period2/26/123/1/12

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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