Skip to main navigation
Skip to search
Skip to main content
New Jersey Institute of Technology Home
Help & FAQ
Link opens in a new tab
Search content at New Jersey Institute of Technology
Home
Profiles
Research units
Facilities
Federal Grants
Research output
Press/Media
Deep level defects in N
+
-CdS/P-CdTe solar cells
P. Kharangarh
, Z. Cheng
, G. Liu
, G. E. Georgiou
,
K. K. Chin
Physics
CNBM New Energy Materials Research Center
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Deep level defects in N
+
-CdS/P-CdTe solar cells'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Activation Energy
50%
Activation Level
50%
Back Contact
50%
Cadmium Telluride
100%
CdTe Solar Cells
100%
Cell Performance
50%
Cu Diffusion
50%
Deep Level Defects
100%
Diode
50%
Diode Current
50%
Energy Levels
50%
High-temperature Processes
50%
Nitrogen-doped Carbon Dots (N-CDs)
50%
Ohmic Contact
50%
Recombination Model
50%
Reverse Bias
50%
Shockley-Read-Hall Recombination
50%
Solar Cell
100%
Temperature Effect
50%
Voltage Dependence
50%
Engineering
Activation Level
25%
Back Contact
25%
Cell Performance
25%
Deep Defect
25%
Deep Level
100%
Defects
100%
Energy Engineering
25%
Ohmic Contacts
25%
Process Step
25%
Reverse Bias
25%
Shockley
25%
Solar Cell
100%
Temperature Dependence
25%
Thin Films
25%