Degradation of NMOSFETs during high-field injection with reverse biased voltage at source and drain junctions

Keyphrases

• Reverse-biased 100%
• High-field Injection 100%
• Biased Voltage 100%
• NMOSFET 100%
• Gate Injection 83%
• Charge to Breakdown 33%
• Stress-induced 16%
• High Field 16%
• Oxide Interfaces 16%
• Breakdown Characteristics 16%
• Electron Traps 16%
• Gate Oxide 16%
• Injection Mode 16%
• Electron Injection 16%
• N-channel MOSFET 16%
• Threshold Voltage 16%
• Oxide Field 16%
• Oxide Traps 16%
• Transconductance 16%
• Trap Characteristics 16%
• Oxide Breakdown 16%
• Breakdown Value 16%

Engineering

• Drain Junction 100%
• Induced Stress 50%
• Gate Oxide 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Electron Trap 50%
• Electron Injection 50%
• Initial Estimate 50%

Earth and Planetary Sciences

• Threshold Voltage 100%
• Transconductance 100%