Demonstration of CAM and TCAM using phase change devices

Bipin Rajendran; Roger W. Cheek; Luis A. Lastras; Michele M. Franceschini; Matthew J. Breitwisch; Alejandro G. Schrott; Jing Li; Robert K. Montoye; Leland Chang; Chung Lam

doi:10.1109/IMW.2011.5873229

Demonstration of CAM and TCAM using phase change devices

Bipin Rajendran, Roger W. Cheek, Luis A. Lastras, Michele M. Franceschini, Matthew J. Breitwisch, Alejandro G. Schrott, Jing Li, Robert K. Montoye, Leland Chang, Chung Lam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

24 Scopus citations

Abstract

We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.

Original language	English (US)
Title of host publication	2011 3rd IEEE International Memory Workshop, IMW 2011
DOIs	https://doi.org/10.1109/IMW.2011.5873229
State	Published - 2011
Externally published	Yes
Event	2011 3rd IEEE International Memory Workshop, IMW 2011 - Monterey, CA, United States Duration: May 22 2011 → May 25 2011

Publication series

Name	2011 3rd IEEE International Memory Workshop, IMW 2011

Other

Other	2011 3rd IEEE International Memory Workshop, IMW 2011
Country/Territory	United States
City	Monterey, CA
Period	5/22/11 → 5/25/11

All Science Journal Classification (ASJC) codes

Hardware and Architecture

Keywords

PCRAM
associative memory
chalcogenide

Access to Document

10.1109/IMW.2011.5873229

Cite this

Rajendran, B., Cheek, R. W., Lastras, L. A., Franceschini, M. M., Breitwisch, M. J., Schrott, A. G., Li, J., Montoye, R. K., Chang, L., & Lam, C. (2011). Demonstration of CAM and TCAM using phase change devices. In 2011 3rd IEEE International Memory Workshop, IMW 2011 Article 5873229 (2011 3rd IEEE International Memory Workshop, IMW 2011). https://doi.org/10.1109/IMW.2011.5873229

@inproceedings{0e6201268a5c4b3f9a41c7e5dd4df355,

title = "Demonstration of CAM and TCAM using phase change devices",

abstract = "We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.",

keywords = "PCRAM, associative memory, chalcogenide",

author = "Bipin Rajendran and Cheek, {Roger W.} and Lastras, {Luis A.} and Franceschini, {Michele M.} and Breitwisch, {Matthew J.} and Schrott, {Alejandro G.} and Jing Li and Montoye, {Robert K.} and Leland Chang and Chung Lam",

year = "2011",

doi = "10.1109/IMW.2011.5873229",

language = "English (US)",

isbn = "9781457702266",

series = "2011 3rd IEEE International Memory Workshop, IMW 2011",

booktitle = "2011 3rd IEEE International Memory Workshop, IMW 2011",

note = "2011 3rd IEEE International Memory Workshop, IMW 2011 ; Conference date: 22-05-2011 Through 25-05-2011",

}

Rajendran, B, Cheek, RW, Lastras, LA, Franceschini, MM, Breitwisch, MJ, Schrott, AG, Li, J, Montoye, RK, Chang, L & Lam, C 2011, Demonstration of CAM and TCAM using phase change devices. in 2011 3rd IEEE International Memory Workshop, IMW 2011., 5873229, 2011 3rd IEEE International Memory Workshop, IMW 2011, 2011 3rd IEEE International Memory Workshop, IMW 2011, Monterey, CA, United States, 5/22/11. https://doi.org/10.1109/IMW.2011.5873229

TY - GEN

T1 - Demonstration of CAM and TCAM using phase change devices

AU - Rajendran, Bipin

AU - Cheek, Roger W.

AU - Lastras, Luis A.

AU - Franceschini, Michele M.

AU - Breitwisch, Matthew J.

AU - Schrott, Alejandro G.

AU - Li, Jing

AU - Montoye, Robert K.

AU - Chang, Leland

AU - Lam, Chung

PY - 2011

Y1 - 2011

N2 - We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.

AB - We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.

KW - PCRAM

KW - associative memory

KW - chalcogenide

UR - http://www.scopus.com/inward/record.url?scp=79959967656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959967656&partnerID=8YFLogxK

U2 - 10.1109/IMW.2011.5873229

DO - 10.1109/IMW.2011.5873229

M3 - Conference contribution

AN - SCOPUS:79959967656

SN - 9781457702266

T3 - 2011 3rd IEEE International Memory Workshop, IMW 2011

BT - 2011 3rd IEEE International Memory Workshop, IMW 2011

T2 - 2011 3rd IEEE International Memory Workshop, IMW 2011

Y2 - 22 May 2011 through 25 May 2011

ER -

Demonstration of CAM and TCAM using phase change devices

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

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