Demonstration of CAM and TCAM using phase change devices

Bipin Rajendran, Roger W. Cheek, Luis A. Lastras, Michele M. Franceschini, Matthew J. Breitwisch, Alejandro G. Schrott, Jing Li, Robert K. Montoye, Leland Chang, Chung Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Abstract

We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.

Original languageEnglish (US)
Title of host publication2011 3rd IEEE International Memory Workshop, IMW 2011
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 3rd IEEE International Memory Workshop, IMW 2011 - Monterey, CA, United States
Duration: May 22 2011May 25 2011

Publication series

Name2011 3rd IEEE International Memory Workshop, IMW 2011

Other

Other2011 3rd IEEE International Memory Workshop, IMW 2011
Country/TerritoryUnited States
CityMonterey, CA
Period5/22/115/25/11

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

Keywords

  • PCRAM
  • associative memory
  • chalcogenide

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