Abstract
The stability and the possible application of our recently reported SiC heterofullerenes inspire the investigation of their further stabilization through ion encapsulation. The endohedral complexes X@C12Si 8, where X=Li+, Na+, K+, Be 2+, Mg2+, Ca2+, Al3+, and Ga 3, are probed at the MPWB1K/6-311G and B3LYP/6-311G (*) levels of theory. The optimized geometries show the expanding or contracting capability of C12Si8 in order to accommodate metal ion guests. The inclusion energies indicate the stability of the complexes compared to the components. Meanwhile, the calculated binding energies show the stabilization of C12Si8 through the inclusion of Be2+, Mg 2+, Al3+, and Ga3+. The hostguest interaction that is probed through NBO atomic charges supports the obtained results. This study refers to "metal ion encapsulation" as a strategy for stabilization of SiC heterofullerenes.
Original language | English (US) |
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Pages (from-to) | 1471-1476 |
Number of pages | 6 |
Journal | Physica B: Condensed Matter |
Volume | 406 |
Issue number | 8 |
DOIs | |
State | Published - Apr 1 2011 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Keywords
- DFT
- Endohedral fullerene
- Ion encapsulation
- SiC Fullerene