Abstract
The evolution of hydrogen when samples of hydrogenated amorphous silicon are subjected to heating is investigated. The study is carried out for samples prepared by glow discharge. The present analysis which is essentially spectroscopic in nature leads to the assumption that two kinds of defects exist in a‐Si:H optically active and optically inactive ones. In the second part of this analysis, various spectroscopic parameters and their temperature dependences in the light of Penn and Wemple‐Didomenico models are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 241-248 |
| Number of pages | 8 |
| Journal | physica status solidi (a) |
| Volume | 77 |
| Issue number | 1 |
| DOIs | |
| State | Published - May 16 1983 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics