Deposition of erbium containing film in porous silicon from ethanol solution of erbium salt

V. Petrovich, S. Volchek, L. Dolgyi, N. Kazuchits, V. Yakovtseva, V. Bondarenko, L. Tsybeskov, P. Fauchet

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

Electrochemical treatment of porous silicon (PS) in ethanol solution of Er(NO3)3 was investigated to obtain material suitable for optoelectronic application. The voltammograms of n+-type and p-type PS vs. an Ag/AgCl reference electrode were examined and compared with these of a Pt electrode. The basic cathode reactions were marked out the voltammograms: (i) the formation and the adsorption of atomic hydrogen; (ii) the formation of molecular hydrogen; (iii) the electrolysis of water and ethanol. No zones relating to electrochemical transitions of Er ions were revealed on the voltammograms. Nevertheless, with the cathode polarization, the formation of an Er-containing deposit was observed at the surface of the cathode. The IR and SIMS analysis were used to study the composition of the deposits. The scheme of the electrochemical and chemical reactions at the cathode is discussed.

Original languageEnglish (US)
Pages (from-to)37-40
Number of pages4
JournalJournal of Porous Materials
Volume7
Issue number1
DOIs
StatePublished - 2000
Externally publishedYes
EventProceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98) - Mallorca, Spain
Duration: Mar 16 1998Mar 20 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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