TY - GEN
T1 - Deposition of large area, directly textured, ZnO:Al films by reactive-environment, hollow cathode sputtering
AU - Patel, A. M.
AU - Guo, S. Y.
AU - Stavrides, A. P.
AU - Cambridge, J. A.
AU - Le, L. T.
AU - Efstathiadis, H.
AU - Haldar, P.
AU - Delahoy, A. E.
PY - 2008
Y1 - 2008
N2 - Aluminum-doped zinc oxide (ZnO:Al) is a promising transparent conducting oxide (TCO) for the second generation, thin film based solar cells. Moderately large area, directly textured ZnO:Al films were successfully deposited by reactive-environment, hollow cathode sputtering (RE-HCS) using metal targets. The morphology, structural, electrical, and optical properties of the films have been investigated and comparisons are made with the properties of commercially available textured SnO2:F. Higher haze and reduced absorption could be obtained with the textured ZnO:Al films. Besides the textured surface, these films (∼1030nm thick) also have a low sheet resistance of 2.8 ohms/square. Hall effect measurements on these films yielded a record high mobility of 49.5 cm2/V-s and carrier concentration of 4.42 × 1020 cm-3. The use of these textured ZnO:Al films as a TCO for single junction a-Si cells resulted in increased Voc, Jsc, and FF. The novel deposition method of RE-HCS provides a possible and promising pathway to a relatively low cost, large area production process for a textured ZnO TCO for thin-film PV manufacturing.
AB - Aluminum-doped zinc oxide (ZnO:Al) is a promising transparent conducting oxide (TCO) for the second generation, thin film based solar cells. Moderately large area, directly textured ZnO:Al films were successfully deposited by reactive-environment, hollow cathode sputtering (RE-HCS) using metal targets. The morphology, structural, electrical, and optical properties of the films have been investigated and comparisons are made with the properties of commercially available textured SnO2:F. Higher haze and reduced absorption could be obtained with the textured ZnO:Al films. Besides the textured surface, these films (∼1030nm thick) also have a low sheet resistance of 2.8 ohms/square. Hall effect measurements on these films yielded a record high mobility of 49.5 cm2/V-s and carrier concentration of 4.42 × 1020 cm-3. The use of these textured ZnO:Al films as a TCO for single junction a-Si cells resulted in increased Voc, Jsc, and FF. The novel deposition method of RE-HCS provides a possible and promising pathway to a relatively low cost, large area production process for a textured ZnO TCO for thin-film PV manufacturing.
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U2 - 10.1109/PVSC.2008.4922812
DO - 10.1109/PVSC.2008.4922812
M3 - Conference contribution
AN - SCOPUS:84879715820
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -