Depth profiling of dopants in thin gate oxides in complementary metal-oxide-semiconductor structures by resonance ionization mass spectrometry

S. W. Downey, A. B. Emerson, G. E. Georgiou, J. Bevk, R. C. Kistler, N. Moriya, D. C. Jacobson, M. L. Wise

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

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Engineering

Material Science

Chemistry