Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, H. P.T. Nguyen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced efficiency droop of 0.491%. The enhanced power and efficiency of the LED with HfO2/SiO2 doped bi-layer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano HfO2/SiO2 not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.

Original languageEnglish (US)
Article number67
JournalOptical and Quantum Electronics
Volume55
Issue number1
DOIs
StatePublished - Jan 2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • Electron blocking layer (EBL)
  • External Quantum Efficiency (EQE)
  • Light-emitting diode (LED)
  • Multiple quantum well (MQW)
  • Nanoparticles (NP)
  • Refractive index (RI)

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