Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced efficiency droop of 0.491%. The enhanced power and efficiency of the LED with HfO₂/SiO₂ doped bi-layer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano HfO₂/SiO₂ not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.