Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions

Agnes Maneesha Dominic Merwin Xavier; Arnob Ghosh; Sheikh Ifatur Rahman; Andrew Allerman; Shamsul Arafin; Siddharth Rajan

doi:10.1063/5.0122919

Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions

Agnes Maneesha Dominic Merwin Xavier, Arnob Ghosh, Sheikh Ifatur Rahman, Andrew Allerman, Shamsul Arafin, Siddharth Rajan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.

Original language	English (US)
Article number	081108
Journal	Applied Physics Letters
Volume	122
Issue number	8
DOIs	https://doi.org/10.1063/5.0122919
State	Published - Feb 20 2023
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/5.0122919

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@article{96af989137844219aab9155928045b7e,

title = "Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions",

abstract = "Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.",

author = "{Dominic Merwin Xavier}, {Agnes Maneesha} and Arnob Ghosh and Rahman, {Sheikh Ifatur} and Andrew Allerman and Shamsul Arafin and Siddharth Rajan",

note = "Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = feb,

day = "20",

doi = "10.1063/5.0122919",

language = "English (US)",

volume = "122",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions

AU - Dominic Merwin Xavier, Agnes Maneesha

AU - Ghosh, Arnob

AU - Rahman, Sheikh Ifatur

AU - Allerman, Andrew

AU - Arafin, Shamsul

AU - Rajan, Siddharth

PY - 2023/2/20

Y1 - 2023/2/20

N2 - Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.

AB - Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.

UR - http://www.scopus.com/inward/record.url?scp=85149005488&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85149005488&partnerID=8YFLogxK

U2 - 10.1063/5.0122919

DO - 10.1063/5.0122919

M3 - Article

AN - SCOPUS:85149005488

SN - 0003-6951

VL - 122

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081108

ER -

Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions

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