Design and evaluation of new majority gate-based RAM cell in quantum-dot cellular automata

Shaahin Angizi, Soheil Sarmadi, Samira Sayedsalehi, Keivan Navi

Research output: Contribution to journalArticlepeer-review

161 Scopus citations

Abstract

Quantum-dot cellular automata is one of the candidate technologies used in Nano scale computer design and a promising replacement for conventional CMOS circuits in the near future. Since memory is one of the significant components of any digital system, designing a high speed and well-optimized QCA random access memory (RAM) is a remarkable subject. In this paper, a new robust five-input majority gate is first presented, which is appropriate for implementation of simple and efficient QCA circuits in single layer. By employing this structure, a novel RAM cell architecture with set and reset ability is proposed. This architecture has a simple and robust structure that helps achieving minimal area, as well as reduction in hardware requirements and clocking zone numbers. Functional correctness of the presented structures is proved by using QCADesigner tool. Simulation results confirm efficiency and usefulness of the proposed architectures vis-à-vis state-of-the-art.

Original languageEnglish (US)
Pages (from-to)43-51
Number of pages9
JournalMicroelectronics Journal
Volume46
Issue number1
DOIs
StatePublished - Jan 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • Five-input majority gate
  • Quantum-dotcellular automata (QCA)
  • RAM cell
  • Set and reset ability

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