TY - GEN
T1 - Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED
AU - Das, Samadrita
AU - Lenka, Trupti Ranjan
AU - Talukdar, Fazal Ahmed
AU - Crupi, Giovanni
AU - Nguyen, Hieu Pham Trung
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using Atlas TCAD and compared them with simulated AIGaN nanowire DUV LED. From the simulation results, a significant efficiency droop was observed in AIGaN LED, attributed to the significant electron leakage. However, compared to AIGaN nanowire DUV LED at a similar emission wavelength, the proposed (SQW) AIlnN- based light-emitter offers higher internal quantum efficiency without droop up to the current density of 1500 A/cm2 and high output optical power. Further research shows that the performance of the AIlnN DUV nanowire LED reduces with multiple QWs in the active region due to the presence of the non- uniform carrier distribution in the active region. This study provides important insights into the design of a new type of high- performance AIlnN nanowire DUV LED, by replacing currently used AIGaN semiconductors.
AB - We report on the illustration of the novel electron blocking layer (EBL) free AIlnN nanowire light-emitting diodes (LED) with a single-quantum well (SQW) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using Atlas TCAD and compared them with simulated AIGaN nanowire DUV LED. From the simulation results, a significant efficiency droop was observed in AIGaN LED, attributed to the significant electron leakage. However, compared to AIGaN nanowire DUV LED at a similar emission wavelength, the proposed (SQW) AIlnN- based light-emitter offers higher internal quantum efficiency without droop up to the current density of 1500 A/cm2 and high output optical power. Further research shows that the performance of the AIlnN DUV nanowire LED reduces with multiple QWs in the active region due to the presence of the non- uniform carrier distribution in the active region. This study provides important insights into the design of a new type of high- performance AIlnN nanowire DUV LED, by replacing currently used AIGaN semiconductors.
KW - AlInN
KW - Deep Ultraviolet (DUV)
KW - Electron Blocking Layer (EBL)
KW - GaN
KW - Light-Emitting Diode (LED)
KW - Multi-Quantum Well (MQW)
UR - http://www.scopus.com/inward/record.url?scp=85160511773&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85160511773&partnerID=8YFLogxK
U2 - 10.1109/ICEE56203.2022.10117760
DO - 10.1109/ICEE56203.2022.10117760
M3 - Conference contribution
AN - SCOPUS:85160511773
T3 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
BT - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Y2 - 11 December 2022 through 14 December 2022
ER -