Design and simulation of T-gate AlN/β-Ga₂O₃ HEMT for DC, RF and high-power nanoelectronics switching applications

Keyphrases

• Nanoelectronics 100%
• High Power 100%
• DC Power 100%
• RF Power 100%
• Switching Application 100%
• Ga2O3 100%
• High Electron Mobility Transistor 100%
• T Gate 100%
• Gas Density 40%
• Fmax 40%
• 2-dimensional Electron Gas (2DEG) 40%
• Blocking Voltage 40%
• Physics-based 20%
• Two Dimensional 20%
• Vertical Devices 20%
• III-nitrides 20%
• Barrier Layer 20%
• Low Resistance 20%
• Polarization Components 20%
• High-power RF 20%
• Lateral Flow Device 20%
• Piezoelectric Polarization 20%
• High Cut-off 20%
• Foot Length 20%
• On-resistance 20%
• RF Applications 20%
• Power Switching Applications 20%
• High Power Switching 20%
• Maximum Oscillation Frequency 20%
• Power Figure of Merit 20%
• Conduction Losses 20%
• RF Analysis 20%
• Device Simulator 20%
• Large Spontaneous Polarization 20%
• DC Analysis 20%
• Polarization Model 20%
• Off-state Breakdown Voltage 20%
• RF Parameters 20%
• Thick Barrier 20%

Engineering

• Two Dimensional 100%
• Nanoelectronics 100%
• Gas Density 66%
• Piezoelectric 33%
• Experimental Result 33%
• Nitride 33%
• Simulators 33%
• Figure of Merit 33%
• Barrier Layer 33%
• Breakdown Voltage 33%
• Cutoff Frequency 33%
• Conduction Loss 33%
• Polarization Component 33%

Material Science

• Transistor 100%
• Aluminum Nitride 100%
• Electron Mobility 100%
• Density of Gases 33%
• Piezoelectricity 16%
• Nitride Compound 16%