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Nanoelectronics
100%
High Power
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DC Power
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RF Power
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Switching Application
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Ga2O3
100%
High Electron Mobility Transistor
100%
T Gate
100%
Gas Density
40%
Fmax
40%
2-dimensional Electron Gas (2DEG)
40%
Blocking Voltage
40%
Physics-based
20%
Two Dimensional
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Vertical Devices
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III-nitrides
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Low Resistance
20%
Polarization Components
20%
High-power RF
20%
Lateral Flow Device
20%
Piezoelectric Polarization
20%
High Cut-off
20%
Foot Length
20%
On-resistance
20%
RF Applications
20%
Power Switching Applications
20%
High Power Switching
20%
Maximum Oscillation Frequency
20%
Power Figure of Merit
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Conduction Losses
20%
RF Analysis
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Device Simulator
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Large Spontaneous Polarization
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DC Analysis
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Polarization Model
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Off-state Breakdown Voltage
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RF Parameters
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Thick Barrier
20%
Engineering
Two Dimensional
100%
Nanoelectronics
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Gas Density
66%
Piezoelectric
33%
Experimental Result
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Nitride
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Simulators
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Figure of Merit
33%
Barrier Layer
33%
Breakdown Voltage
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Cutoff Frequency
33%
Conduction Loss
33%
Polarization Component
33%
Material Science
Transistor
100%
Aluminum Nitride
100%
Electron Mobility
100%
Density of Gases
33%
Piezoelectricity
16%
Nitride Compound
16%