DESIGN CONSIDERATIONS IN SCHOTTKY SOLAR CELLS.

W. A. Anderson; A. E. Delahoy; S. M. Vernon

DESIGN CONSIDERATIONS IN SCHOTTKY SOLAR CELLS.

W. A. Anderson, A. E. Delahoy, S. M. Vernon

Research output: Contribution to conference › Paper › peer-review

Abstract

Schottky solar cells have been fabricated using Cr Schottky metal on p-type silicon. AM1 sunlight efficiency of 6-9. 5% has been measured on 1-3 cm**2 area cells. Computer studies predict a quantum efficiency of 0. 71 for the Schottky cell which compares well to experimental data from 0. 35 to 1. 1 mu . Increased temperature decreases open circuit voltage by 2. 5 mv/ degree C and fill factor by 0. 4%/ degree C similar to previously published data on p-n silicon cells. Performance degradation with temperature cycling to 120 degree C has not been detected.

Original language	English (US)
Pages	400-403
Number of pages	4
State	Published - 1975
Externally published	Yes
Event	Intersoc Energy Convers Eng Conf, 10th, Rec - Newark, DE, USA Duration: Aug 18 1975 → Aug 22 1975

Other

Other	Intersoc Energy Convers Eng Conf, 10th, Rec
City	Newark, DE, USA
Period	8/18/75 → 8/22/75

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "DESIGN CONSIDERATIONS IN SCHOTTKY SOLAR CELLS.",

abstract = "Schottky solar cells have been fabricated using Cr Schottky metal on p-type silicon. AM1 sunlight efficiency of 6-9. 5% has been measured on 1-3 cm**2 area cells. Computer studies predict a quantum efficiency of 0. 71 for the Schottky cell which compares well to experimental data from 0. 35 to 1. 1 mu . Increased temperature decreases open circuit voltage by 2. 5 mv/ degree C and fill factor by 0. 4%/ degree C similar to previously published data on p-n silicon cells. Performance degradation with temperature cycling to 120 degree C has not been detected.",

author = "Anderson, {W. A.} and Delahoy, {A. E.} and Vernon, {S. M.}",

year = "1975",

language = "English (US)",

pages = "400--403",

note = "Intersoc Energy Convers Eng Conf, 10th, Rec ; Conference date: 18-08-1975 Through 22-08-1975",

}

TY - CONF

T1 - DESIGN CONSIDERATIONS IN SCHOTTKY SOLAR CELLS.

AU - Anderson, W. A.

AU - Delahoy, A. E.

AU - Vernon, S. M.

PY - 1975

Y1 - 1975

N2 - Schottky solar cells have been fabricated using Cr Schottky metal on p-type silicon. AM1 sunlight efficiency of 6-9. 5% has been measured on 1-3 cm**2 area cells. Computer studies predict a quantum efficiency of 0. 71 for the Schottky cell which compares well to experimental data from 0. 35 to 1. 1 mu . Increased temperature decreases open circuit voltage by 2. 5 mv/ degree C and fill factor by 0. 4%/ degree C similar to previously published data on p-n silicon cells. Performance degradation with temperature cycling to 120 degree C has not been detected.

AB - Schottky solar cells have been fabricated using Cr Schottky metal on p-type silicon. AM1 sunlight efficiency of 6-9. 5% has been measured on 1-3 cm**2 area cells. Computer studies predict a quantum efficiency of 0. 71 for the Schottky cell which compares well to experimental data from 0. 35 to 1. 1 mu . Increased temperature decreases open circuit voltage by 2. 5 mv/ degree C and fill factor by 0. 4%/ degree C similar to previously published data on p-n silicon cells. Performance degradation with temperature cycling to 120 degree C has not been detected.

UR - http://www.scopus.com/inward/record.url?scp=0016643817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016643817&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0016643817

SP - 400

EP - 403

T2 - Intersoc Energy Convers Eng Conf, 10th, Rec

Y2 - 18 August 1975 through 22 August 1975

ER -

DESIGN CONSIDERATIONS IN SCHOTTKY SOLAR CELLS.

Abstract

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All Science Journal Classification (ASJC) codes

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