Abstract
Schottky solar cells have been fabricated using Cr Schottky metal on p-type silicon. AM1 sunlight efficiency of 6-9. 5% has been measured on 1-3 cm**2 area cells. Computer studies predict a quantum efficiency of 0. 71 for the Schottky cell which compares well to experimental data from 0. 35 to 1. 1 mu . Increased temperature decreases open circuit voltage by 2. 5 mv/ degree C and fill factor by 0. 4%/ degree C similar to previously published data on p-n silicon cells. Performance degradation with temperature cycling to 120 degree C has not been detected.
| Original language | English (US) |
|---|---|
| Pages | 400-403 |
| Number of pages | 4 |
| State | Published - 1975 |
| Externally published | Yes |
| Event | Intersoc Energy Convers Eng Conf, 10th, Rec - Newark, DE, USA Duration: Aug 18 1975 → Aug 22 1975 |
Other
| Other | Intersoc Energy Convers Eng Conf, 10th, Rec |
|---|---|
| City | Newark, DE, USA |
| Period | 8/18/75 → 8/22/75 |
All Science Journal Classification (ASJC) codes
- General Engineering