Determining strain, chemical composition, and thermal properties of Si/SiGe nanostructures via Raman scattering spectroscopy

L. Tsybeskov, S. A. Mala, X. Wang, J. M. Baribeau, X. Wu, D. J. Lockwood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Studies by Raman spectroscopy of two kinds of Si/SiGe nanostructures-quantum dot multilayers and planar superlattices-reveal a wide variety of spectral features including first- and second-order Raman scattering, polarized Raman scattering, and low-frequency inelastic light scattering associated with folded acoustic phonons. Here we overview how such features can be employed to semi-quantitatively analyze the strain, chemical composition, and thermal conductivity in these industrially important materials that are widely used for producing electronic and optoelectronic devices.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsP. Granitzer, R. Boukherroub, D.J. Lockwood, H. Masuda, S. Virtanen
PublisherElectrochemical Society Inc.
Pages99-113
Number of pages15
Edition1
ISBN (Print)9781510871618
DOIs
StatePublished - 2018
EventSymposium on Pits and Pores 8: Nanomaterials - Fabrication, Properties, and Applications - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: Sep 30 2018Oct 4 2018

Publication series

NameECS Transactions
Number1
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Pits and Pores 8: Nanomaterials - Fabrication, Properties, and Applications - AiMES 2018, ECS and SMEQ Joint International Meeting
Country/TerritoryMexico
CityCancun
Period9/30/1810/4/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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