@inproceedings{eff4b0b11d89413d9361f31244295048,
title = "Dielectric science on today's devices",
abstract = "The trends of various high-k gate dielectrics deposited on silicon or germanium is reviewed for logic and memory devices. Initially, Zr and low percentage of Al incorporation into HfO2-based high-k dielectrics gate stack on silicon through different process conditions were outlined. Subsequently, high-k gate stack deposition process on Ge was evaluated to form a stable Ge/high-k interface. We have also looked at the high-k gate dielectric stacks in a MIM capacitor for possible applications in memory and AI hardware.",
author = "Durgamadhab Misra",
note = "Publisher Copyright: {\textcopyright} 2020 ECS - The Electrochemical Society.; 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 ; Conference date: 10-05-2020 Through 14-05-2020",
year = "2020",
month = apr,
day = "1",
doi = "10.1149/09705.0135ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "5",
pages = "135--142",
editor = "J. Martino and B.-Y. Nguyen and Gamiz, {F. J.} and H. Ishii and J.-P. Raskin and S. Selberherr and E. Simoen",
booktitle = "237th ECS Meeting",
address = "United Kingdom",
edition = "5",
}