Dielectric science on today's devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The trends of various high-k gate dielectrics deposited on silicon or germanium is reviewed for logic and memory devices. Initially, Zr and low percentage of Al incorporation into HfO2-based high-k dielectrics gate stack on silicon through different process conditions were outlined. Subsequently, high-k gate stack deposition process on Ge was evaluated to form a stable Ge/high-k interface. We have also looked at the high-k gate dielectric stacks in a MIM capacitor for possible applications in memory and AI hardware.

Original languageEnglish (US)
Title of host publication237th ECS Meeting
Subtitle of host publicationAdvanced CMOS-Compatible Semiconductor Devices 19
EditorsJ. Martino, B.-Y. Nguyen, F. J. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen
PublisherInstitute of Physics Publishing
Pages135-142
Number of pages8
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - Apr 1 2020
Event237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada
Duration: May 10 2020May 14 2020

Publication series

NameECS Transactions
Number5
Volume97
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
CountryCanada
CityMontreal
Period5/10/205/14/20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Dielectric science on today's devices'. Together they form a unique fingerprint.

Cite this