Dielectric-semiconductor interface for high-k gate dielectrics for sub-16nm CMOS technology

Keyphrases

• CMOS Technology 100%
• Dielectric 100%
• Semiconductor Interfaces 100%
• HfO2 100%
• High-k Gate Dielectrics 100%
• Antenna 50%
• Atomic Layer Deposition 50%
• EOT Scaling 50%
• Oxygen Vacancy Formation 50%
• High-k Dielectric 25%
• State of Charge 25%
• Annealing 25%
• Deposition Parameters 25%
• Annealing Temperature 25%
• Dielectric Constant 25%
• Deposition Process 25%
• Subsequent Annealing 25%
• Interfacial Layer 25%
• Interface State Density 25%
• High Mobility Substrates 25%
• Pre-deposition 25%
• Surface Treatment 25%
• Gate Dielectric 25%
• Plasma Exposure 25%
• Ar Plasma 25%
• CexZr1-xO2 25%
• Dielectric Reliability 25%
• Electrical Performance 25%
• HfAlOx 25%
• Multilayered Structure 25%
• Dadaism 25%
• Zr Addition 25%
• Aluminum Oxide Film 25%
• Film Densification 25%
• Excess Al 25%
• Resistance to Stress 25%
• Cyclic Deposition 25%
• Hafnium Aluminum Oxide 25%
• Atomic Layer Deposition Method 25%
• III-V Materials 25%

Material Science

• Dielectric Material 100%
• Dielectric-Semiconductor Interface 100%
• Oxygen Vacancy 33%
• Film 16%
• Density 16%
• Permittivity 16%
• State-of-Charge 16%
• Annealing 16%
• Aluminum Oxide 16%
• Oxide Film 16%
• Hafnium 16%