Dielectrics and Metal Stack Engineering for Multilevel Resistive Random-Access Memory

Keyphrases

• HfO2 100%
• Resistive Random Access Memory (ReRAM) 100%
• Stack Engineering 100%
• Dielectric Stack 100%
• Switching Energy 100%
• Metal Stack 100%
• Compliance Current 66%
• Top Electrode 66%
• Bottom Electrode 66%
• Al2O3 Buffer Layer 66%
• Energy Consumption Reduction 33%
• Energy Requirement 33%
• Power Requirement 33%
• Deposition Process 33%
• Oxygen Vacancy 33%
• Aluminum Oxide 33%
• Resistance to Change 33%
• Two-terminal 33%
• Metal Layer 33%
• Resistive State 33%
• Bilayer Structure 33%
• Varying Compliance 33%
• ReRAM Devices 33%
• Multiple Resistance 33%
• Change Capability 33%

Engineering

• Engineering 100%
• Dielectrics 100%
• Resistive Random Access Memory 100%
• Buffer Layer 100%
• Energy Engineering 50%
• Electric Power Utilization 50%
• Power Requirement 50%
• Energy Requirement 50%
• Oxygen Vacancy 50%
• Deposition Process 50%
• Resistance Change 50%
• Metal Layer 50%

Material Science

• Dielectric Material 100%
• Resistive Random-Access Memory 100%
• Al2O3 100%
• Buffer Layer 66%
• Oxygen Vacancy 33%