Keyphrases
Al2O3 Buffer Layer
66%
Aluminum Oxide
33%
Bilayer Structure
33%
Bottom Electrode
66%
Change Capability
33%
Compliance Current
66%
Deposition Process
33%
Dielectric Stack
100%
Energy Consumption Reduction
33%
Energy Requirement
33%
HfO2
100%
Metal Layer
33%
Metal Stack
100%
Multiple Resistance
33%
Oxygen Vacancy
33%
Power Requirement
33%
ReRAM Devices
33%
Resistance to Change
33%
Resistive Random Access Memory (ReRAM)
100%
Resistive State
33%
Stack Engineering
100%
Switching Energy
100%
Top Electrode
66%
Two-terminal
33%
Varying Compliance
33%
Engineering
Buffer Layer
100%
Deposition Process
50%
Dielectrics
100%
Electric Power Utilization
50%
Energy Engineering
50%
Energy Requirement
50%
Engineering
100%
Metal Layer
50%
Oxygen Vacancy
50%
Power Requirement
50%
Resistance Change
50%
Resistive Random Access Memory
100%
Material Science
Al2O3
100%
Buffer Layer
66%
Dielectric Material
100%
Oxygen Vacancy
33%
Resistive Random-Access Memory
100%