Abstract
Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.
Original language | English (US) |
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Title of host publication | Materials Processing and Interfaces |
Publisher | Minerals, Metals and Materials Society |
Pages | 641-649 |
Number of pages | 9 |
Volume | 1 |
ISBN (Print) | 9781118296073 |
State | Published - Jan 1 2012 |
Event | 141st Annual Meeting and Exhibition, TMS 2012 - Orlando, FL, United States Duration: Mar 11 2012 → Mar 15 2012 |
Other
Other | 141st Annual Meeting and Exhibition, TMS 2012 |
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Country/Territory | United States |
City | Orlando, FL |
Period | 3/11/12 → 3/15/12 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanics of Materials
- Metals and Alloys