Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production

Sudhakar Shet; N. Ravindra; Yanfa Yan; Mowafak Al-Jassim

Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production

Sudhakar Shet, N. Ravindra, Yanfa Yan, Mowafak Al-Jassim

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O₂ gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.

Original language	English (US)
Title of host publication	Materials Processing and Interfaces
Publisher	Minerals, Metals and Materials Society
Pages	641-649
Number of pages	9
Volume	1
ISBN (Print)	9781118296073
State	Published - Jan 1 2012
Event	141st Annual Meeting and Exhibition, TMS 2012 - Orlando, FL, United States Duration: Mar 11 2012 → Mar 15 2012

Other

Other	141st Annual Meeting and Exhibition, TMS 2012
Country/Territory	United States
City	Orlando, FL
Period	3/11/12 → 3/15/12

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys

Cite this

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title = "Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production",

abstract = "Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.",

author = "Sudhakar Shet and N. Ravindra and Yanfa Yan and Mowafak Al-Jassim",

year = "2012",

month = jan,

day = "1",

language = "English (US)",

isbn = "9781118296073",

volume = "1",

pages = "641--649",

booktitle = "Materials Processing and Interfaces",

publisher = "Minerals, Metals and Materials Society",

address = "United States",

note = "141st Annual Meeting and Exhibition, TMS 2012 ; Conference date: 11-03-2012 Through 15-03-2012",

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TY - GEN

T1 - Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production

AU - Shet, Sudhakar

AU - Ravindra, N.

AU - Yan, Yanfa

AU - Al-Jassim, Mowafak

PY - 2012/1/1

Y1 - 2012/1/1

N2 - Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.

AB - Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.

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M3 - Conference contribution

AN - SCOPUS:84860851039

SN - 9781118296073

VL - 1

SP - 641

EP - 649

BT - Materials Processing and Interfaces

PB - Minerals, Metals and Materials Society

T2 - 141st Annual Meeting and Exhibition, TMS 2012

Y2 - 11 March 2012 through 15 March 2012

ER -

Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production

Abstract

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All Science Journal Classification (ASJC) codes

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