TY - GEN
T1 - Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production
AU - Shet, Sudhakar
AU - Ravindra, Nuggehalli
AU - Yan, Yanfa
AU - Al-Jassim, Mowafak
PY - 2012
Y1 - 2012
N2 - Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.
AB - Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.
KW - Co-doping
KW - Photoelectrochemical
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=84860851039&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860851039&partnerID=8YFLogxK
U2 - 10.1002/9781118356074.ch82
DO - 10.1002/9781118356074.ch82
M3 - Conference contribution
AN - SCOPUS:84860851039
SN - 9781118296073
T3 - TMS Annual Meeting
SP - 641
EP - 649
BT - Materials Processing and Interfaces
PB - Minerals, Metals and Materials Society
T2 - 141st Annual Meeting and Exhibition, TMS 2012
Y2 - 11 March 2012 through 15 March 2012
ER -