Doping and co-doping of bandgap-engineered ZnO films for solar driven hydrogen production

Sudhakar Shet, N. Ravindra, Yanfa Yan, Mowafak Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Co-doped ZnO:(Al,N) and ZnO:(Ga,N) films were deposited by co-sputtering using radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that the ZnO:(Al,N) and ZnO:(Ga,N) films exhibited greatly enhanced crystallinity compared to ZnO:N films doped by pure N and deposited under similar conditions. Furthermore, the ZnO:(Al,N) and ZnO:(Ga,N) films showed much higher N-incorporation than ZnO:N films deposited with pure N doping. As a result, the ZnO:(Ga,N) films showed significantly higher photocurrents than ZnO:N doped only by N. The ZnO:(Cu,Ga) films were synthesized by RF magnetron sputtering in O2 gas ambient at room temperature and then annealed at 500°C in air for 2 hours. We found that the carrier concentration tuning does not significantly change the bandgap and crystallinity of the ZnO:Cu films. However, it can optimize the carrier concentration and thus dramatically enhance PEC response for the bandgap-reduced p-type ZnO thin films.

Original languageEnglish (US)
Title of host publicationMaterials Processing and Interfaces
PublisherMinerals, Metals and Materials Society
Pages641-649
Number of pages9
Volume1
ISBN (Print)9781118296073
StatePublished - Jan 1 2012
Event141st Annual Meeting and Exhibition, TMS 2012 - Orlando, FL, United States
Duration: Mar 11 2012Mar 15 2012

Other

Other141st Annual Meeting and Exhibition, TMS 2012
CountryUnited States
CityOrlando, FL
Period3/11/123/15/12

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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