Drift mobility measurements in porous silicon

L. Tsybeskov; C. Peng; P. M. Fauchet; Q. Gu; E. A. Schiff

doi:10.1557/proc-420-825

Drift mobility measurements in porous silicon

L. Tsybeskov, C. Peng, P. M. Fauchet, Q. Gu, E. A. Schiff

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Modulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10^-4 cm²/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ; in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.

Original language	English (US)
Pages (from-to)	825-829
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	420
DOIs	https://doi.org/10.1557/proc-420-825
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{14fb3088d8274ef7a355285ae8dd9e11,

title = "Drift mobility measurements in porous silicon",

abstract = "Modulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10-4 cm2/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ; in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.",

author = "L. Tsybeskov and C. Peng and Fauchet, {P. M.} and Q. Gu and Schiff, {E. A.}",

year = "1996",

doi = "10.1557/proc-420-825",

language = "English (US)",

volume = "420",

pages = "825--829",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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TY - JOUR

T1 - Drift mobility measurements in porous silicon

AU - Tsybeskov, L.

AU - Peng, C.

AU - Fauchet, P. M.

AU - Gu, Q.

AU - Schiff, E. A.

PY - 1996

Y1 - 1996

N2 - Modulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10-4 cm2/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ; in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.

AB - Modulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10-4 cm2/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ; in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.

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U2 - 10.1557/proc-420-825

DO - 10.1557/proc-420-825

M3 - Conference article

AN - SCOPUS:0030379241

SN - 0272-9172

VL - 420

SP - 825

EP - 829

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Drift mobility measurements in porous silicon

Abstract

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