TY - JOUR
T1 - Driving device comparison for phase-change memory
AU - Li, Lin
AU - Lu, Kailiang
AU - Rajendran, Bipin
AU - Happ, Thomas D.
AU - Lung, Hsiang Lan
AU - Lam, Chung
AU - Chan, Mansun
N1 - Funding Information:
Manuscript received August 12, 2010; revised November 28, 2010; accepted December 10, 2010. Date of current version February 24, 2011. This work was supported in part by the Research Grant Council of Hong Kong under the Project 611108 and in part by a Grant from IBM T. J. Watson Research Center. The review of this paper was arranged by Editor D. Esseni. L. Li, K. Lu, and M. Chan are with the Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong (e-mail: [email protected]). B. Rajendran and C. Lam are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA. T. D. Happ is with the Qimonda Aktiengesellschaft, 81739 Munich, Germany. H.-L. Lung is with the Macronix International Company Ltd., Hsinchu 30078, Taiwan. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2010.2100082
PY - 2011/3
Y1 - 2011/3
N2 - A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metaloxidesemiconductor field-effect transistors (MOSFETs) are studied in detail as they represent distinct classes of driving devices. Different performance parameters including cell size, current drive, disturb immunity, power dissipation, and scalability are carefully compared. While p-n diodes show superiority in technology nodes with large device dimensions, the scaling process has improved the performance of GAA MOSFETs significantly to outperform that of p-n diodes in extremely scaled technologies.
AB - A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metaloxidesemiconductor field-effect transistors (MOSFETs) are studied in detail as they represent distinct classes of driving devices. Different performance parameters including cell size, current drive, disturb immunity, power dissipation, and scalability are carefully compared. While p-n diodes show superiority in technology nodes with large device dimensions, the scaling process has improved the performance of GAA MOSFETs significantly to outperform that of p-n diodes in extremely scaled technologies.
KW - Diode
KW - gate-all-around MOSFET (GAA MOSFET)
KW - ovonic unified memory (OUM)
KW - phase change memory (PCM)
KW - phase change random access memory (PRAM)
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U2 - 10.1109/TED.2010.2100082
DO - 10.1109/TED.2010.2100082
M3 - Article
AN - SCOPUS:79952021989
SN - 0018-9383
VL - 58
SP - 664
EP - 671
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
M1 - 5719075
ER -