Driving device comparison for phase-change memory

Lin Li, Kailiang Lu, Bipin Rajendran, Thomas D. Happ, Hsiang Lan Lung, Chung Lam, Mansun Chan

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metaloxidesemiconductor field-effect transistors (MOSFETs) are studied in detail as they represent distinct classes of driving devices. Different performance parameters including cell size, current drive, disturb immunity, power dissipation, and scalability are carefully compared. While p-n diodes show superiority in technology nodes with large device dimensions, the scaling process has improved the performance of GAA MOSFETs significantly to outperform that of p-n diodes in extremely scaled technologies.

Original languageEnglish (US)
Article number5719075
Pages (from-to)664-671
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number3
DOIs
StatePublished - Mar 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Diode
  • gate-all-around MOSFET (GAA MOSFET)
  • ovonic unified memory (OUM)
  • phase change memory (PCM)
  • phase change random access memory (PRAM)

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