@inproceedings{dd6c890e409e487ab57b9893110e0b6c,
title = "Dry and wet processed interface layer in Ge/high-k devices studied by deep level transient spectroscopy",
abstract = "Dry and wet processed interface layer quality of Ge/high-k MOS structures were studied by deep level transient spectroscopy (DLTS). The interface treatments were: (i) simple chemical oxidation (Chemox); (ii) chemical oxide removal (COR) followed by 1 nm oxide by slot-plane-antenna (SPA) plasma (COR&SPAOx); and (iii) COR followed by vapor O3 treatment (COR&O3). By conducting deep level transient spectroscopy (DLTS) on these three samples, it is found that the dry processed interface (COR&SPAOx and COR&O3) shows a majority slow trap which was not observed in wet processed interface treatment (Chemox). This results clearly suggest that formation of a different type of interfacial GeOx is responsible for the the additional defect type in dry processed devices.",
author = "Ding, {Y. M.} and D. Misra",
note = "Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",
year = "2016",
doi = "10.1149/07202.0329ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "329--333",
editor = "D. Misra and D. Bauza and Z. Chen and Sundaram, {K. B.} and Obeng, {Y. S.} and T. Chikyow and H. Iwai",
booktitle = "Dielectrics for Nanosystems 7",
edition = "2",
}