Dry and wet processed interface layer in Ge/high-k devices studied by deep level transient spectroscopy

Y. M. Ding, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Dry and wet processed interface layer quality of Ge/high-k MOS structures were studied by deep level transient spectroscopy (DLTS). The interface treatments were: (i) simple chemical oxidation (Chemox); (ii) chemical oxide removal (COR) followed by 1 nm oxide by slot-plane-antenna (SPA) plasma (COR&SPAOx); and (iii) COR followed by vapor O3 treatment (COR&O3). By conducting deep level transient spectroscopy (DLTS) on these three samples, it is found that the dry processed interface (COR&SPAOx and COR&O3) shows a majority slow trap which was not observed in wet processed interface treatment (Chemox). This results clearly suggest that formation of a different type of interfacial GeOx is responsible for the the additional defect type in dry processed devices.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsY. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, D. Misra
PublisherElectrochemical Society Inc.
Pages329-333
Number of pages5
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2016
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: May 29 2016Jun 2 2016

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period5/29/166/2/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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