Dual material gate field effect transistor (DMGFET)

Wei Long; Ken K. Chin

Dual material gate field effect transistor (DMGFET)

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.

Original language	English (US)
Pages (from-to)	549-552
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Dual material gate field effect transistor (DMGFET)",

abstract = "A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.",

author = "Wei Long and Chin, {Ken K.}",

year = "1997",

language = "English (US)",

pages = "549--552",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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T1 - Dual material gate field effect transistor (DMGFET)

AU - Long, Wei

AU - Chin, Ken K.

PY - 1997

Y1 - 1997

N2 - A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.

AB - A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.

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M3 - Conference article

AN - SCOPUS:84886447997

SN - 0163-1918

SP - 549

EP - 552

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Dual material gate field effect transistor (DMGFET)

Abstract

All Science Journal Classification (ASJC) codes

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