Dual material gate field effect transistor (DMGFET)

Wei Long, Ken Chin

Research output: Contribution to journalConference articlepeer-review

96 Scopus citations

Abstract

A new type of device, the dual material gate field effect transistor (DMGFET), is presented for the first time. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain, resulting a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short channel effects.

Original languageEnglish (US)
Pages (from-to)549-552
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - Dec 1 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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