It is pointed out that the semiconductor localized intrinsic/impurity defect levels' dual roles for carrier doping and trapping (Shockley-Read-Hall generation-recombination) have been treated differently and inconsistently. It is proposed that instead of ionization or activation energy, transition Gibbs free energy level should be used for the dual roles of doping-trapping. To qualitatively evaluate the effectiveness of doping and of trapping, the concept of doping efficacy η d and two types of trapping efficacy η t and η SRH are proposed. The relationship of η d, η t, and η SRH is formulated. Various values of η SRH for different types of defect levels are presented. General ramification of the proposed concepts and efficacy of trapping is explored for polycrystalline thin film solar cells.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - May 15 2012|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)