Dynamic resistance - A metric for variability characterization of phase-change memory

Bipin Rajendran, Matt Breitwisch, Ming Hsiu Lee, Geoffrey W. Burr, Yen Hao Shih, Roger Cheek, Alejandro Schrott, Chieh Fang Chen, Eric Joseph, Ravi Dasaka, H. L. Lung, Chung Lam

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

Original languageEnglish (US)
Pages (from-to)126-129
Number of pages4
JournalIEEE Electron Device Letters
Issue number2
StatePublished - 2009
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


  • Chalcogenide
  • Electrothermal simulations
  • Nonvolatile memory
  • Phase-change memory (PCM)


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