Abstract
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.
Original language | English (US) |
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Pages (from-to) | 126-129 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 2 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Keywords
- Chalcogenide
- Electrothermal simulations
- Nonvolatile memory
- Phase-change memory (PCM)