Dynamic resistance - A metric for variability characterization of phase-change memory

Bipin Rajendran; Matt Breitwisch; Ming Hsiu Lee; Geoffrey W. Burr; Yen Hao Shih; Roger Cheek; Alejandro Schrott; Chieh Fang Chen; Eric Joseph; Ravi Dasaka; H. L. Lung; Chung Lam

doi:10.1109/LED.2008.2010004

Dynamic resistance - A metric for variability characterization of phase-change memory

Bipin Rajendran
, Matt Breitwisch
, Ming Hsiu Lee
, Geoffrey W. Burr
, Yen Hao Shih
, Roger Cheek
, Alejandro Schrott
, Chieh Fang Chen
, Eric Joseph
, Ravi Dasaka
, H. L. Lung
, Chung Lam

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R_d) is found to be inversely proportional to the amplitude of the programming current, as R_d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

Original language	English (US)
Pages (from-to)	126-129
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/LED.2008.2010004
State	Published - 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Chalcogenide
Electrothermal simulations
Nonvolatile memory
Phase-change memory (PCM)

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10.1109/LED.2008.2010004

Cite this

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title = "Dynamic resistance - A metric for variability characterization of phase-change memory",

abstract = "The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.",

keywords = "Chalcogenide, Electrothermal simulations, Nonvolatile memory, Phase-change memory (PCM)",

author = "Bipin Rajendran and Matt Breitwisch and Lee, \{Ming Hsiu\} and Burr, \{Geoffrey W.\} and Shih, \{Yen Hao\} and Roger Cheek and Alejandro Schrott and Chen, \{Chieh Fang\} and Eric Joseph and Ravi Dasaka and Lung, \{H. L.\} and Chung Lam",

year = "2009",

doi = "10.1109/LED.2008.2010004",

language = "English (US)",

volume = "30",

pages = "126--129",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Dynamic resistance - A metric for variability characterization of phase-change memory

AU - Rajendran, Bipin

AU - Breitwisch, Matt

AU - Lee, Ming Hsiu

AU - Burr, Geoffrey W.

AU - Shih, Yen Hao

AU - Cheek, Roger

AU - Schrott, Alejandro

AU - Chen, Chieh Fang

AU - Joseph, Eric

AU - Dasaka, Ravi

AU - Lung, H. L.

AU - Lam, Chung

PY - 2009

Y1 - 2009

N2 - The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

AB - The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

KW - Chalcogenide

KW - Electrothermal simulations

KW - Nonvolatile memory

KW - Phase-change memory (PCM)

UR - https://www.scopus.com/pages/publications/59649112340

UR - https://www.scopus.com/pages/publications/59649112340#tab=citedBy

U2 - 10.1109/LED.2008.2010004

DO - 10.1109/LED.2008.2010004

M3 - Article

AN - SCOPUS:59649112340

SN - 0741-3106

VL - 30

SP - 126

EP - 129

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Dynamic resistance - A metric for variability characterization of phase-change memory

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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