Dynamic resistance - A metric for variability characterization of phase-change memory

Bipin Rajendran; Matt Breitwisch; Ming Hsiu Lee; Geoffrey W. Burr; Yen Hao Shih; Roger Cheek; Alejandro Schrott; Chieh Fang Chen; Eric Joseph; Ravi Dasaka; H. L. Lung; Chung Lam

doi:10.1109/LED.2008.2010004

Dynamic resistance - A metric for variability characterization of phase-change memory

Bipin Rajendran, Matt Breitwisch, Ming Hsiu Lee, Geoffrey W. Burr, Yen Hao Shih, Roger Cheek, Alejandro Schrott, Chieh Fang Chen, Eric Joseph, Ravi Dasaka, H. L. Lung, Chung Lam

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R_d) is found to be inversely proportional to the amplitude of the programming current, as R_d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

Original language	English (US)
Pages (from-to)	126-129
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/LED.2008.2010004
State	Published - 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Chalcogenide
Electrothermal simulations
Nonvolatile memory
Phase-change memory (PCM)

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10.1109/LED.2008.2010004

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title = "Dynamic resistance - A metric for variability characterization of phase-change memory",

abstract = "The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.",

keywords = "Chalcogenide, Electrothermal simulations, Nonvolatile memory, Phase-change memory (PCM)",

author = "Bipin Rajendran and Matt Breitwisch and Lee, \{Ming Hsiu\} and Burr, \{Geoffrey W.\} and Shih, \{Yen Hao\} and Roger Cheek and Alejandro Schrott and Chen, \{Chieh Fang\} and Eric Joseph and Ravi Dasaka and Lung, \{H. L.\} and Chung Lam",

year = "2009",

doi = "10.1109/LED.2008.2010004",

language = "English (US)",

volume = "30",

pages = "126--129",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Dynamic resistance - A metric for variability characterization of phase-change memory

AU - Rajendran, Bipin

AU - Breitwisch, Matt

AU - Lee, Ming Hsiu

AU - Burr, Geoffrey W.

AU - Shih, Yen Hao

AU - Cheek, Roger

AU - Schrott, Alejandro

AU - Chen, Chieh Fang

AU - Joseph, Eric

AU - Dasaka, Ravi

AU - Lung, H. L.

AU - Lam, Chung

PY - 2009

Y1 - 2009

N2 - The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

AB - The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.

KW - Chalcogenide

KW - Electrothermal simulations

KW - Nonvolatile memory

KW - Phase-change memory (PCM)

UR - https://www.scopus.com/pages/publications/59649112340

UR - https://www.scopus.com/inward/citedby.url?scp=59649112340&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2010004

DO - 10.1109/LED.2008.2010004

M3 - Article

AN - SCOPUS:59649112340

SN - 0741-3106

VL - 30

SP - 126

EP - 129

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Dynamic resistance - A metric for variability characterization of phase-change memory

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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