| Original language | English (US) |
|---|---|
| Pages (from-to) | iii-viii |
| Journal | ECS Transactions |
| Volume | 16 |
| Issue number | 5 |
| State | Published - 2009 |
| Event | Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 13 2008 → Oct 15 2008 |
All Science Journal Classification (ASJC) codes
- General Engineering