ECS Transactions: Preface

Research output: Contribution to journal › Editorial › peer-review

Original language	English (US)
Pages (from-to)	iii-viii
Journal	ECS Transactions
Volume	16
Issue number	5
State	Published - 2009
Event	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 13 2008 → Oct 15 2008

All Science Journal Classification (ASJC) codes

@article{1638d0600c9f489ba163613f1a320cf2,

title = "ECS Transactions: Preface",

author = "Zfflsamares Kar and Dolf Landheer and Michel Houssa and Durga Misra and Elshocht, \{Sven Van\} and Hiroshi Iwai",

year = "2009",

language = "English (US)",

volume = "16",

pages = "iii--viii",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Institute of Physics",

number = "5",

note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",

}

TY - JOUR

T1 - ECS Transactions

T2 - Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting

AU - Kar, Zfflsamares

AU - Landheer, Dolf

AU - Houssa, Michel

AU - Misra, Durga

AU - Elshocht, Sven Van

AU - Iwai, Hiroshi

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/76549104684

UR - https://www.scopus.com/pages/publications/76549104684#tab=citedBy

M3 - Editorial

AN - SCOPUS:76549104684

SN - 1938-5862

VL - 16

SP - iii-viii

JO - ECS Transactions

JF - ECS Transactions

IS - 5

Y2 - 13 October 2008 through 15 October 2008

ER -