Original language | English (US) |
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Journal | ECS Transactions |
Volume | 16 |
Issue number | 5 |
State | Published - Dec 1 2008 |
Event | Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 13 2008 → Oct 15 2008 |
All Science Journal Classification (ASJC) codes
- Engineering(all)