Effect of Al doping on the reliability of ALD HfO₂

Keyphrases

• HfO2 100%
• Atomic Layer Deposited 100%
• Al Doping 100%
• Dielectric 66%
• Gate Stack 66%
• HfAlOx 66%
• Layer Thickness 33%
• Layered Structure 33%
• Stress-induced 33%
• Breakdown Characteristics 33%
• Gate Injection 33%
• Interfacial Layer 33%
• Injection Mode 33%
• Time-dependent Dielectric Breakdown 33%
• Interface State Density 33%
• Stress Induced Leakage Current 33%
• Flat-band Voltage 33%
• Dielectric Reliability 33%
• Hf Incorporation 33%
• Field Stress 33%
• Constant Electric Field 33%
• Gate Leakage Current 33%
• Excess Al 33%
• Resistance to Stress 33%
• Multi-fold 33%
• Al Content 33%
• Charge to Breakdown 33%
• Weibull Slope 33%

Engineering

• Atomic Layer 100%
• Dielectrics 100%
• Gate Stack 50%
• Layer Thickness 25%
• Layered Structure 25%
• Induced Stress 25%
• Interfacial Layer 25%
• Interface State 25%
• Stress Induced Leakage Current 25%
• Stress Field 25%
• Al Content 25%

Material Science

• Dielectric Material 100%
• Density 33%
• Stress Field 33%
• Electrical Breakdown 33%