Effect of aligned nanorods in ZnO thin films for enhanced photoelectrochemical response

Sudhakar Shet, Kwang Soon Ahn, Todd Deutsch, Yanfa Yan, John Turner, M. Al-Jassim, N. M. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

We have investigated the structural properties, optical absorption, and photoelectrochemical (PEC) responses for ZnO deposited at different temperatures by sputtering the ZnO target in pure Ar gas and mixed Ar:N2 gas ambient. We found that the presence of N2 in the growth ambient helped to promote the formation of aligned nanorods at the high substrate temperature of 500°C, resulting in significantly enhanced PEC response, as compared to ZnO films deposited in pure Ar gas ambient. Our results suggest that deposition ambient can be used to produce desired properties of thin films and aligned nanorods may help to improve PEC perforniance.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition MS and T'08
Pages920-935
Number of pages16
StatePublished - 2008
Externally publishedYes
EventMaterials Science and Technology Conference and Exhibition, MS and T'08 - Pittsburgh, PA, United States
Duration: Oct 5 2008Oct 9 2008

Publication series

NameMaterials Science and Technology Conference and Exhibition, MS and T'08
Volume2

Other

OtherMaterials Science and Technology Conference and Exhibition, MS and T'08
Country/TerritoryUnited States
CityPittsburgh, PA
Period10/5/0810/9/08

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials

Keywords

  • Bandgap
  • Crystallinity
  • Gas ambient
  • N concentration
  • Nanorod
  • Photoelectrochemical
  • RF power
  • Sputter
  • ZnO

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