Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructure

Keyphrases

• SiGe 100%
• Heterostructure 100%
• Subsequent Annealing 100%
• Dry Etching 100%
• Annealing 66%
• Dislocation Loops 66%
• Annealing Temperature 33%
• Defect Levels 33%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 33%
• Deep Level Transient Spectroscopy 33%
• Processed Samples 33%
• Strained SiGe 33%
• Annealing Behavior 33%
• SiGe Film 33%
• Strain Discontinuity 33%
• Heterostructure Metal Oxide 33%
• Misfit Strain 33%

Material Science

• Heterojunction 100%
• Annealing 100%
• Dry Etching 100%
• Film 66%
• Capacitor 33%
• Metal Oxide 33%
• Point Defect 33%
• Oxide Semiconductor 33%
• Deep-Level Transient Spectroscopy 33%

Engineering

• Defects 100%
• Heterojunctions 100%
• Dry Etching 100%
• Dislocation Loop 66%
• Transients 33%
• Annealing Temperature 33%
• Deep Level 33%
• Metal Oxide Semiconductor 33%
• Measured Value 33%