Keyphrases
SiGe
100%
Heterostructure
100%
Subsequent Annealing
100%
Dry Etching
100%
Annealing
66%
Dislocation Loops
66%
Annealing Temperature
33%
Defect Levels
33%
Metal-oxide-semiconductor Capacitor (MOSCAP)
33%
Deep Level Transient Spectroscopy
33%
Processed Samples
33%
Strained SiGe
33%
Annealing Behavior
33%
SiGe Film
33%
Strain Discontinuity
33%
Heterostructure Metal Oxide
33%
Misfit Strain
33%
Material Science
Heterojunction
100%
Annealing
100%
Dry Etching
100%
Film
66%
Capacitor
33%
Metal Oxide
33%
Point Defect
33%
Oxide Semiconductor
33%
Deep-Level Transient Spectroscopy
33%
Engineering
Defects
100%
Heterojunctions
100%
Dry Etching
100%
Dislocation Loop
66%
Transients
33%
Annealing Temperature
33%
Deep Level
33%
Metal Oxide Semiconductor
33%
Measured Value
33%