Effect of gas ambient on the synthesis of Al and N co-doped ZnO:(Al,N) films and their influence on PEC response for photoelectrochemical water splitting application

Sudhakar Shet, Le Chen, Houwen Tang, Todd Deutsch, Heli Wang, Nuggehalli Ravindra, Fa Yan, John Turner, Mowafak Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N 2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.

Original languageEnglish (US)
Title of host publicationMaterials Processing and Energy Materials
PublisherMinerals, Metals and Materials Society
Pages135-142
Number of pages8
ISBN (Print)9781118029459
DOIs
StatePublished - Jan 1 2011

Publication series

NameTMS Annual Meeting
Volume1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Keywords

  • Band gap
  • Co-doping
  • Crystallinity
  • Gas ambient
  • N concentration
  • Photoelectrochemical
  • RF power
  • Sputter
  • Substrate temperature
  • ZnO
  • ZnO:(Al,N)

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