@inproceedings{0cb76073a4f44b9aa160289bd163a488,
title = "Effect of gas ambient on the synthesis of Al and N co-doped ZnO:(Al,N) films and their influence on PEC response for photoelectrochemical water splitting application",
abstract = "Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N 2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.",
keywords = "Band gap, Co-doping, Crystallinity, Gas ambient, N concentration, Photoelectrochemical, RF power, Sputter, Substrate temperature, ZnO, ZnO:(Al,N)",
author = "Sudhakar Shet and Le Chen and Houwen Tang and Todd Deutsch and Heli Wang and Nuggehalli Ravindra and Fa Yan and John Turner and Mowafak Al-Jassim",
year = "2011",
doi = "10.1002/9781118062111.ch14",
language = "English (US)",
isbn = "9781118029459",
series = "TMS Annual Meeting",
publisher = "Minerals, Metals and Materials Society",
pages = "135--142",
booktitle = "Materials Processing and Energy Materials",
address = "United States",
}