@inproceedings{8a0db1a479c34ca6b324874013cd0e76,
title = "Effect of HfO2 passivation layer on light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes",
abstract = "One of the probable reasons behind the limitation of light extraction efficiency (LEE) in III-nitride nanowire (NW) deep ultraviolet (UV) light-emitting diodes (LEDs) is the presence of the high surface density states that significantly contribute to the non-radiative recombination near the surface. Herein, we investigate the LEE of a single AlInN NW UV LED in the entire UV wavelength regime using finite-difference time-domain simulations. It is found that these LEDs favor transverse-magnetic (TM) polarized LEE over transverse-electric (TE) polarized emission. Further, we examine the role of the HfO2 surface passivation layer in the improvement of LEE of AlInN NW LED at ~282 nm wavelength. Our results show that the TM-polarized LEE of such LED without any passivation is only ~25.2%, whereas the maximum recorded LEE is ~40.6% with the utilization of 40 nm HfO2 passivation layer. This study provides a promising approach for enhancing the LEE of NW UV LEDs.",
author = "Moulik Patel and Barsha Jain and Velpula, {Ravi Teja} and Nguyen, {Hieu Pham Trung}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 ; Conference date: 30-05-2021 Through 03-06-2021",
year = "2021",
doi = "10.1149/10203.0035ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "3",
pages = "35--42",
editor = "V. Chakrapani and Hite, {J. K.} and J. Zavada and T. Anderson and M. Tadjer and Kilgore, {S. H.}",
booktitle = "239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - Wide Bandgap Semiconductor Materials and Devices 22",
address = "United Kingdom",
edition = "3",
}