Effect of nitridation on 1/F noise in n-mosfetS with HfO2 dielectric

P. Srinivasan; E. Simoen; L. Pantisano; Z. M. Rittersma; C. Claeys; D. Misra

doi:10.1149/1.2209315

Effect of nitridation on 1/F noise in n-mosfetS with HfO₂ dielectric

P. Srinivasan, E. Simoen, L. Pantisano, Z. M. Rittersma, C. Claeys, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports the nitridation effects on 1/f noise in n-MOSFETs with MOCVD HfO₂ as gate dielectric. Nitridation of the gate oxides was carried out by using a post-deposition anneal (PDA) process in a N₂ or NH₃ ambient. Predominantly 1/f type noise is observed, with γ∼1. For non-nitrided interfaces, significant variation in noise was observed when different PDAs are employed. Among the studied PDAs, devices annealed with N₂ show the lowest input referred noise, close to ITRS specifications when compared to O₂ and NH₃ anneals. Decoupled plasma nitridation (DPN) with 7-9% N₂ content was employed for devices involving nitrided interfaces. Post-deposition anneals on such devices showed a suppressed effect as the input-referred noise was found to have similar values for the different conditions. The noise mechanism is also found to vary in devices with nitrided interface and no-PDA. A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed. Lower trap densities are obtained from the trap profile for the non-nitrided no-anneal condition. Volume and interface trap densities, extracted from input-referred noise values, showed lowest values for a N₂ PDA anneal, while an O₂ anneal showed the highest values for non-nitrided devices. Devices with nitrided interfaces show similar value for all PDAs, with the values in-between the N₂ and the O₂ non-nitrided PDA. copyright The Electrochemical Society.

Original language	English (US)
Title of host publication	Physics and Technology of High-k Gate Dielectrics III
Publisher	Electrochemical Society Inc.
Pages	681-691
Number of pages	11
Edition	5
ISBN (Electronic)	1566774446
DOIs	https://doi.org/10.1149/1.2209315
State	Published - 2006
Event	3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States Duration: Oct 16 2005 → Oct 21 2005

Publication series

Name	ECS Transactions
Number	5
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	10/16/05 → 10/21/05

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2209315

Cite this

@inproceedings{9fbaca6847b04c148573bd10b0605d2e,

title = "Effect of nitridation on 1/F noise in n-mosfetS with HfO2 dielectric",

abstract = "This paper reports the nitridation effects on 1/f noise in n-MOSFETs with MOCVD HfO2 as gate dielectric. Nitridation of the gate oxides was carried out by using a post-deposition anneal (PDA) process in a N2 or NH3 ambient. Predominantly 1/f type noise is observed, with γ∼1. For non-nitrided interfaces, significant variation in noise was observed when different PDAs are employed. Among the studied PDAs, devices annealed with N2 show the lowest input referred noise, close to ITRS specifications when compared to O2 and NH3 anneals. Decoupled plasma nitridation (DPN) with 7-9\% N2 content was employed for devices involving nitrided interfaces. Post-deposition anneals on such devices showed a suppressed effect as the input-referred noise was found to have similar values for the different conditions. The noise mechanism is also found to vary in devices with nitrided interface and no-PDA. A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed. Lower trap densities are obtained from the trap profile for the non-nitrided no-anneal condition. Volume and interface trap densities, extracted from input-referred noise values, showed lowest values for a N2 PDA anneal, while an O2 anneal showed the highest values for non-nitrided devices. Devices with nitrided interfaces show similar value for all PDAs, with the values in-between the N2 and the O2 non-nitrided PDA. copyright The Electrochemical Society.",

author = "P. Srinivasan and E. Simoen and L. Pantisano and Rittersma, \{Z. M.\} and C. Claeys and D. Misra",

year = "2006",

doi = "10.1149/1.2209315",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "5",

pages = "681--691",

booktitle = "Physics and Technology of High-k Gate Dielectrics III",

edition = "5",

note = "3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

}

Srinivasan, P, Simoen, E, Pantisano, L, Rittersma, ZM, Claeys, C & Misra, D 2006, Effect of nitridation on 1/F noise in n-mosfetS with HfO₂ dielectric. in Physics and Technology of High-k Gate Dielectrics III. 5 edn, ECS Transactions, no. 5, vol. 1, Electrochemical Society Inc., pp. 681-691, 3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society, Los Angeles, CA, United States, 10/16/05. https://doi.org/10.1149/1.2209315

TY - GEN

T1 - Effect of nitridation on 1/F noise in n-mosfetS with HfO2 dielectric

AU - Srinivasan, P.

AU - Simoen, E.

AU - Pantisano, L.

AU - Rittersma, Z. M.

AU - Claeys, C.

AU - Misra, D.

PY - 2006

Y1 - 2006

N2 - This paper reports the nitridation effects on 1/f noise in n-MOSFETs with MOCVD HfO2 as gate dielectric. Nitridation of the gate oxides was carried out by using a post-deposition anneal (PDA) process in a N2 or NH3 ambient. Predominantly 1/f type noise is observed, with γ∼1. For non-nitrided interfaces, significant variation in noise was observed when different PDAs are employed. Among the studied PDAs, devices annealed with N2 show the lowest input referred noise, close to ITRS specifications when compared to O2 and NH3 anneals. Decoupled plasma nitridation (DPN) with 7-9% N2 content was employed for devices involving nitrided interfaces. Post-deposition anneals on such devices showed a suppressed effect as the input-referred noise was found to have similar values for the different conditions. The noise mechanism is also found to vary in devices with nitrided interface and no-PDA. A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed. Lower trap densities are obtained from the trap profile for the non-nitrided no-anneal condition. Volume and interface trap densities, extracted from input-referred noise values, showed lowest values for a N2 PDA anneal, while an O2 anneal showed the highest values for non-nitrided devices. Devices with nitrided interfaces show similar value for all PDAs, with the values in-between the N2 and the O2 non-nitrided PDA. copyright The Electrochemical Society.

AB - This paper reports the nitridation effects on 1/f noise in n-MOSFETs with MOCVD HfO2 as gate dielectric. Nitridation of the gate oxides was carried out by using a post-deposition anneal (PDA) process in a N2 or NH3 ambient. Predominantly 1/f type noise is observed, with γ∼1. For non-nitrided interfaces, significant variation in noise was observed when different PDAs are employed. Among the studied PDAs, devices annealed with N2 show the lowest input referred noise, close to ITRS specifications when compared to O2 and NH3 anneals. Decoupled plasma nitridation (DPN) with 7-9% N2 content was employed for devices involving nitrided interfaces. Post-deposition anneals on such devices showed a suppressed effect as the input-referred noise was found to have similar values for the different conditions. The noise mechanism is also found to vary in devices with nitrided interface and no-PDA. A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed. Lower trap densities are obtained from the trap profile for the non-nitrided no-anneal condition. Volume and interface trap densities, extracted from input-referred noise values, showed lowest values for a N2 PDA anneal, while an O2 anneal showed the highest values for non-nitrided devices. Devices with nitrided interfaces show similar value for all PDAs, with the values in-between the N2 and the O2 non-nitrided PDA. copyright The Electrochemical Society.

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DO - 10.1149/1.2209315

M3 - Conference contribution

AN - SCOPUS:33845246841

T3 - ECS Transactions

SP - 681

EP - 691

BT - Physics and Technology of High-k Gate Dielectrics III

PB - Electrochemical Society Inc.

T2 - 3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society

Y2 - 16 October 2005 through 21 October 2005

ER -