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Effect of nitridation on 1/F noise in n-mosfetS with HfO
2
dielectric
P. Srinivasan
, E. Simoen
, L. Pantisano
, Z. M. Rittersma
, C. Claeys
,
D. Misra
Electrical and Computer Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
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Dive into the research topics of 'Effect of nitridation on 1/F noise in n-mosfetS with HfO
2
dielectric'. Together they form a unique fingerprint.
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Keyphrases
MOSFET
100%
Nitrides
100%
Nitridation
100%
HfO2 Dielectric
100%
Annealing
55%
Post-deposition Annealing
55%
Input Noise
22%
Trap Profile
22%
Noise Generation Mechanism
11%
HfO2
11%
Interface Traps
11%
Gate Oxide
11%
Metal-organic Chemical Vapor Deposition (MOCVD)
11%
NMOSFET
11%
Gate Dielectric
11%
Copyright
11%
Annealing Process
11%
Nitridation Effect
11%
Decoupled Plasma Nitridation
11%
Low Trap Density
11%
PDA Device
11%
Low Input Noise
11%
Engineering
Dielectrics
100%
Significant Change
100%
Gate Oxide
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Gate Dielectric
100%
Mosfets
100%
Interface Trap
100%
Material Science
Nitriding
100%
Dielectric Material
100%
Density
50%
Oxide Compound
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%