Effect of output buffer design on 40Gb/s limiting amplifiers designed with InP HBT technology

G. Georgiou, V. Houtsma, R. Pullela, Q. Lee, A. Leven, J. S. Weiner, R. Kopf, A. Tate, Y. Yang, Y. Baeyens, Y. K. Chen

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

An InP-based HBT technology with peak ft∼135GHz is used to design and fabricate several 3-stage limiting amplifier with high margin at >40Gbps. Feedback techniques are used in all design for the first two stages. The different designs compare the conventional (resistive load) differential pair output buffer with a feedback (active load) transimpedance output buffer. The common differential specifications are S11 and S22 < -15dB and S21 > 25dB with output swing >500mV. Results show that the design with the negative feedback output buffer has a lower small-signal bandwidth but a larger 40Gb/s eye opening than design with the conventional differential pair output buffer.

Original languageEnglish (US)
Pages (from-to)2269-2272
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
StatePublished - Aug 18 2003
Externally publishedYes
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: Jun 8 2003Jun 13 2003

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effect of output buffer design on 40Gb/s limiting amplifiers designed with InP HBT technology'. Together they form a unique fingerprint.

Cite this